Destruction-free parameter extraction for a physics-based circuit simulator IGCT model

This paper presents a practical destruction-free parameter extraction methodology for a new physics-based circuit simulator buffer-layer Integrated Gate Commutated Thyristor (IGCT) model. Most key parameters needed for this model can be extracted by one simple clamped inductive-load switching experiment. To validate this extraction method, a clamped inductive load switching experiment was performed, and corresponding simulations were carried out by employing the IGCT model with parameters extracted through the presented methodology. Good agreement has been obtained between the experimental data and simulation results.

Floating-body SOI memory: Concepts, physics and challenges

We present an overview of the single-transistor memory cells (lT-DRAMs), which are based on floating-body effects in SOI MOSFETs. The typical device architectures, principles of operation and key mechanisms for programming are described. The various approaches (Z-RAM, MSDRAM, etc) are compared in terms of performance and potential for aggressive scaling. ©The Electrochemical Society.

Generation of conjugate meshes for complex geometries for coupled multi-physics simulations

Over recent years we have developed and published research aimed at producing a meshing, geometry editing and simulation system capable of handling large scale, real world applications and implemented in an end-to-end parallel, scalable manner. The particular focus of this paper is the extension of this meshing system to include conjugate meshes for multi-physics simulations. Two contrasting applications are presented: export of a body-conformal mesh to drive a commercial, third-party simulation system; and direct use of the cut-Cartesian octree mesh with a single, integrated, close-coupled multi-physics simulation system. Copyright © 2010 by W.N.Dawes.