Simulating dynamic covariance structures for testing the adaptive behavior of variable selection algorithms (Invited Paper)

Variable selection for regression is a classical statistical problem, motivated by concerns that too large a number of covariates may bring about overfitting and unnecessarily high measurement costs. Novel difficulties arise in streaming contexts, where the correlation structure of the process may be drifting, in which case it must be constantly tracked so that selections may be revised accordingly. A particularly interesting phenomenon is that non-selected covariates become missing variables, inducing bias on subsequent decisions. This raises an intricate exploration-exploitation tradeoff, whose dependence on the covariance tracking algorithm and the choice of variable selection scheme is too complex to be dealt with analytically. We hence capitalise on the strength of simulations to explore this problem, taking the opportunity to tackle the difficult task of simulating dynamic correlation structures. © 2008 IEEE.

Strong flexoelectric behavior in bimesogenic liquid crystals

In this paper, we demonstrate strong flexoelectric coupling in bimesogenic liquid crystals. This strong coupling is determined via the flexoelectro-optic effect in chiral nematic liquid crystals based on bimesogenic mixtures that are doped with low concentrations of high twisting power chiral additive. Two mixtures were examined: one had a pitch length of p∼300nm, the other had a pitch length of p∼600nm. These mixtures exhibit enantiotropic chiral nematic phases close to room temperature. We found that full-intensity modulation, that is, a rotation of the optic axis of 45° between crossed polarizers, could be achieved at significantly lower applied electric fields (E<5Vμm -1) than previously reported. In fact, for the condition of full-intensity modulation, the lowest electric-field strength recorded was E=2Vμm-1. As a result of a combination of the strong flexoelectric coupling and a divergence in the pitch, tilt angles of the optic axis up to 87°, i.e., a rotation of the optic axis through 174°, were observed. Furthermore, the flexoelastic ratios, which may be considered as a figure-of-merit parameter, were calculated from the results and found to be large, ranging from 1.3to2C/Nm for a temperature range of up to 40°C. © 2006 American Institute of Physics.

Ink-jet printing of carbon nanotube thin film transistors

Ink-jet printing is an important process for placing active electronics on plastic substrates. We demonstrate ink-jet printing as a viable method for large area fabrication of carbon nanotube (CNT) thin film transistors (TFTs). We investigate different routes for producing stable CNT solutions ("inks"). These consist of dispersion methods for CNT debundling and the use of different solvents, such as N -methyl-2-pyrrolidone. The resulting printable inks are dispensed by ink-jet onto electrode bearing silicon substrates. The source to drain electrode gap is bridged by percolating networks of CNTs. Despite the presence of metallic CNTs, our devices exhibit field effect behavior, with effective mobility of ∼0.07 cm2 /V s and ON/OFF current ratio of up to 100. This result demonstrates the feasibility of ink-jet printing of nanostructured materials for TFT manufacture. © 2007 American Institute of Physics.

Two-dimensional Cartesian air-gap element (CAGE) for dynamic finite-element modeling of electrical machines with a flat air gap

This paper extends the air-gap element (AGE) to enable the modeling of flat air gaps. AGE is a macroelement originally proposed by Abdel-Razek et al.for modeling annular air gaps in electrical machines. The paper presents the theory of the new macroelement and explains its implementation within a time-stepped finite-element (FE) code. It validates the solution produced by the new macroelement by comparing it with that obtained by using an FE mesh with a discretized air gap. It then applies the model to determine the open-circuit electromotive force of an axial-flux permanent-magnet machine and compares the results with measurements.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

Properties of amorphous carbon-silicon alloys deposited by a high plasma density source

The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon-silicon alloys (a-C1-xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap well over 2.5 eV. The friction behavior and friction mechanism of these alloys are studied and compared with that of a-C:H, ta-C:H, and ta-C. We show how UV Raman spectroscopy allows the direct detection of Si-C, Si-Hx, and C-Hx vibrations, not seen in visible Raman spectra. © 2001 American Institute of Physics.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.