Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

Improved infrared thermal imaging of a CMOS MEMS device

We report a technique which can be used to improve the accuracy of infrared (IR) surface temperature measurements made on MEMS (Micro-Electro-Mechanical- Systems) devices. The technique was used to thermally characterize a SOI (Silicon-On-Insulator) CMOS (Complementary Metal Oxide Semiconductor) MEMS thermal flow sensor. Conventional IR temperature measurements made on the sensor were shown to give significant surface temperature errors, due to the optical transparency of the SiO 2 membrane layers and low emissivity/high reflectivity of the metal. By making IR measurements on radiative carbon micro-particles placed in isothermal contact with the device, the accuracy of the surface temperature measurement was significantly improved. © 2010 EDA Publishing/THERMINIC.

Wavelength-tuneable liquid crystal lasers from the visible to the near-infrared

The study of band-edge lasing from dye-doped chiral nematic liquid crystals has thus far been largely restricted to visible wavelengths. In this paper, a wide range of commercially available laser dyes are examined for their suitability as infrared emitters within a chiral nematic host. Problems such as poor solubility and reduced quantum efficiencies are overcome, and successful band-edge lasing is demonstrated within the range of 735-850 nm, using the dyes LD800, HITC-P and DOTC-P. This paper also reports on progress towards widely tuneable liquid crystal lasers, capable of emission in the region 460- 850 nm. Key to this is the use of common pump source, capable of simultaneously exciting all of the dyes (both infrared and visible) that are present within the system. Towards this aim, we successfully demonstrate near-infrared lasing (800 nm) facilitated by Förster energy transfer between the visible dye DCM, and the infra-red dye LD800, enabling pump wavelengths anywhere between 420 and 532 nm to be used. These results demonstrate that small and low-cost tuneable visible to near-infrared laser sources are achievable, using a single common pump source. Such devices are envisaged to have wide-ranging applications including medical imaging (including optical coherence tomography), point-of-care optical medical diagnostics (such as flow cytometry), telecommunications, and optical signatures for security coatings. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Far-infrared emission and absorption by hot carriers in superlattices

Some of the earliest theoretical speculation, stimulated by the growth of semiconductor superlattices, focused on novel devices based on vertical transport through engineered band structures; Esaki and Tsu promised Bloch oscillators in narrow mini-band systems and Kazarinov and Suris contemplated electrically stimulated intersubband transitions as sources of infrared radiation. Nearly twenty years later these material systems have been perfected, characterized and understood and experiments are emerging that test some of these original concepts for novel submillimetre wave electronics. Here we describe recent experiments on intersubband emission in quantum wells stimulated by resonant tunnelling currents. A critical issue at this time is devising a way to achieve population inversion. Other experiments explore 'saturation' effects in narrow miniband transport. Thermal saturation may be viewed as a precursor to Bloch oscillation if the same effects can be induced with an applied electric field.

Wavelength-tuneable liquid crystal lasers from the visible to the near-infrared

The study of band-edge lasing from dye-doped chiral nematic liquid crystals has thus far been largely restricted to visible wavelengths. In this paper, a wide range of commercially available laser dyes are examined for their suitability as infrared emitters within a chiral nematic host. Problems such as poor solubility and reduced quantum efficiencies are overcome, and successful band-edge lasing is demonstrated within the range of 735-850 nm, using the dyes LD800, HITC-P and DOTC-P. This paper also reports on progress towards widely tuneable liquid crystal lasers, capable of emission in the region 460- 850 nm. Key to this is the use of common pump source, capable of simultaneously exciting all of the dyes (both infrared and visible) that are present within the system. Towards this aim, we successfully demonstrate near-infrared lasing (800 nm) facilitated by Förster energy transfer between the visible dye DCM, and the infra-red dye LD800, enabling pump wavelengths anywhere between 420 and 532 nm to be used. These results demonstrate that small and low-cost tuneable visible to near-infrared laser sources are achievable, using a single common pump source. Such devices are envisaged to have wide-ranging applications including medical imaging (including optical coherence tomography), point-of-care optical medical diagnostics (such as flow cytometry), telecommunications, and optical signatures for security coatings. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

Microstructural evolution of SiOx films and its effect on the luminescence of Si nanoclusters

In this paper we demonstrate that the structural and optical properties of Si nanoclusters (Si ncs) formed by thermal annealing of SiOx films prepared by plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering are very different. In fact, at a fixed Si excess and annealing temperature, photoluminescence (PL) spectra of sputtered samples are redshifted with respect to PECVD samples, denoting a larger Si ncs size. In addition, PL intensity reaches a maximum in sputtered films at annealing temperatures much lower than those needed in PECVD films. These data are correlated with structural properties obtained by energy filtered transmission electron microscopy and electron energy loss spectroscopy. It is shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration occurs in sputtered films. These data are explained on the basis of the different initial structural properties of the as-deposited films that become crucial for the subsequent evolution. © 2008 American Institute of Physics.

Synthesis and luminescence properties of erbium silicate thin films

We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.

Mid-infrared Raman-soliton continuum pumped by a nanotube-mode-locked sub-picosecond Tmdoped MOPFA

We demonstrate a mid-infrared Raman-soliton continuum extending from 1.9 to 3 μm in a highly germanium-doped silica-clad fiber, pumped by a nanotube mode-locked thulium-doped fiber system, delivering 12 kW sub-picosecond pulses at 1.95 μm. This simple and robust source of light covers a portion of the atmospheric transmission window. © 2013 Optical Society of America.