Significant improvements in optical power budgets of real-time optical OFDM PON systems.

Based on a comprehensive theoretical optical orthogonal frequency division multiplexing (OOFDM) system model rigorously verified by comparing numerical results with end-to-end real-time experimental measurements at 11.25Gb/s, detailed explorations are undertaken, for the first time, of the impacts of various physical factors on the OOFDM system performance over directly modulated DFB laser (DML)-based, intensity modulation and direct detection (IMDD), single-mode fibre (SMF) systems without in-line optical amplification and chromatic dispersion compensation. It is shown that the low extinction ratio (ER) of the DML modulated OOFDM signal is the predominant factor limiting the maximum achievable optical power budget, and the subcarrier intermixing effect associated with square-law photon detection in the receiver reduces the optical power budget by at least 1dB. Results also indicate that, immediately after the DML in the transmitter, the insertion of a 0.02nm bandwidth optical Gaussian bandpass filter with a 0.01nm wavelength offset with respect to the optical carrier wavelength can enhance the OOFDM signal ER by approximately 1.24dB, thus resulting in a 7dB optical power budget improvement at a total channel BER of 1 × 10(-3).

Real-time experimental demonstration of low-cost VCSEL intensity-modulated 11.25 Gb/s optical OFDM signal transmission over 25 km PON systems.

The feasibility of utilising low-cost, un-cooled vertical cavity surface-emitting lasers (VCSELs) as intensity modulators in real-time optical OFDM (OOFDM) transceivers is experimentally explored, for the first time, in terms of achievable signal bit rates, physical mechanisms limiting the transceiver performance and performance robustness. End-to-end real-time transmission of 11.25 Gb/s 64-QAM-encoded OOFDM signals over simple intensity modulation and direct detection, 25 km SSMF PON systems is experimentally demonstrated with a power penalty of 0.5 dB. The low extinction ratio of the VCSEL intensity-modulated OOFDM signal is identified to be the dominant factor determining the maximum obtainable transmission performance. Experimental investigations indicate that, in addition to the enhanced transceiver performance, adaptive power loading can also significantly improve the system performance robustness to variations in VCSEL operating conditions. As a direct result, the aforementioned capacity versus reach performance is still retained over a wide VCSEL bias (driving) current (voltage) range of 4.5 mA to 9 mA (275 mVpp to 320 mVpp). This work is of great value as it demonstrates the possibility of future mass production of cost-effective OOFDM transceivers for PON applications.

Simple adaptively modulated optical OFDM modems using subcarrier modulation with input/output reconfigurability

Three novel designs of adaptively modulated optical orthogonal frequency division multiplexing modems using subcarrier modulation (AMOOFDM-SCM) are proposed, for the first time, each of which requires a single IFFT/FFT operation. These designs has a number of salient advantages including a significantly simplified modem configuration due to the involvement of a single IFFT/FFT operation, input/output reconfigurability, dynamic bandwidth allocation capability, cost reduction and system flexibility and performance robustness to variations in transmission link conditions. Investigations show that these three modems are capable of supporting >60Gb/s AMOOFDM-SCM signal transmission over 20km, 40km and 60km single-mode fibre-based intensity modulation and direct detection transmission links without optical amplification and chromatic dispersion compensation. Copyright © 2010 The authors.

Adaptive modulation induced WDM impairment reduction in optical OFDM PONs

The transmission performance of multi-channel adaptively modulated optical OFDM (AMOOFDM) signals is numerically investigated, for the first time, in optical amplification- and chromatic dispersion compensation-free, intensity-modulation and direct-detection systems incorporating directly modulated DFB lasers (DMLs). It is shown that adaptive modulation not only reduces significantly the nonlinear WDM impairments induced by the effects of cross-phase modulation and four-wave mixing, but also compensates effectively for the DML-induced frequency chirp effect. In comparison with identical modulation, adaptive modulation improves the maximum achievable signal transmission capacity of a central channel by a factor of 1.3 and 3.6 for 40km and 80km SMFs, respectively, with corresponding dynamic input optical power ranges being extended by approximately 5dB. In addition, adaptive modulation also enables cross-channel complementary modulation format mapping, leading to an improved transmission capacity of the entire WDM system. Copyright © 2010 The authors.

Experimental demonstration of real-time optical OFDM Transmission at 7.5 Gb/s over 25-km SSMF using a 1-GHz RSOA

The 7.5-Gb/s real-time end-to-end optical orthogonal frequency-division- multiplexing (OOFDM) transceivers incorporating variable power loading on each individual subcarrier are demonstrated experimentally using a live-optimized reflective semiconductor optical amplifier intensity modulator having a modulation bandwidth as narrow as 1 GHz. Real-time OOFDM signal transmission at 7.5 Gb/s over 25-km standard single-mode fiber is achieved across the $C$-band in simple intensity modulation and direct detection systems without in-line optical amplification and dispersion compensation. © 2006 IEEE.

First real-time experimental demonstrations of 11.25Gb/s optical OFDMA PONs with adaptive dynamic bandwidth allocation.

End-to-end real-time experimental demonstrations are reported, for the first time, of aggregated 11.25Gb/s over 26.4km standard SMF, optical orthogonal frequency division multiple access (OOFDMA) PONs with adaptive dynamic bandwidth allocation (DBA). The demonstrated intensity-modulation and direct-detection (IMDD) OOFDMA PON system consists of two optical network units (ONUs), each of which employs a DFB-based directly modulated laser (DML) or a VCSEL-based DML for modulating upstream signals. Extensive experimental explorations of dynamic OOFDMA PON system properties are undertaken utilizing identified optimum DML operating conditions. It is shown that, for simultaneously achieving acceptable BERs for all upstream signals, the OOFDMA PON system has a >3dB dynamic ONU launch power variation range, and the BER performance of the system is insusceptible to any upstream symbol offsets slightly smaller than the adopted cyclic prefix. In addition, experimental results also indicate that, in addition to maximizing the aggregated system transmission capacity, adaptive DBA can also effectively reduce imperfections in transmission channel properties without affecting signal bit rates offered to individual ONUs.

Photovoltaic measurements in carbon nanotube - Amorphous silicon core/shell nanowire

Carbon nanotube is one of the promising materials for exploring new concepts in solar energy conversion and photon detection. Here, we report the first experimental realization of a single core/shell nanowire photovoltaic device (2-4μm) based on carbon nanotube and amorphous silicon. Specifically, a multi-walled carbon nanotube (MWNTs) was utilized as the metallic core, on which n-type and intrinsic amorphous silicon layers were coated. A Schottky junction was formed by sputtering a transparent conducting indium-tin-oxide layer to wrap the outer shell of the device. The single coaxial nanowire device showed typical diode ratifying properties with turn-on voltage around 1V and a rectification ratio of 104 when biased at ±2V. Under illumination, it gave an open circuit voltage of ∼0.26V. Our study has shown a simple and useful platform for gaining insight into nanowire charge transport and collection properties. Fundamental studies of such nanowire device are important for improving the efficiency of future nanowire solar cells or photo detectors. © 2012 IEEE.

Vertical CNT-Si photodiode array.

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.