139 resultados para high temperature superconductor
Resumo:
High temperature superconductors, such as melt-processed YBCO bulks, have great advantages on trapping strong magnetic fields in liquid nitrogen. To enable them to function well, there are some traditional ways of magnetizing them, in which the YBCO bulks are magnetized instantly under a very strong source of magnetic field. These ways would consume great amounts of power to make the superconductors trap as much field as possible. Thermally Actuated Magnetization (TAM) Flux pump has been proved a perfect substitution for these expensive methods by using a relatively small magnet as the source. In this way, the field is developed gradually over many pulses. Unlike conventional flux pumping ways, the TAM does not drive the superconductor normal during the process of magnetization. In former experiments for the flux pump, some fundamental tests were done. In this paper, the experiment system is advanced to a new level with better temperature control to the thermal waves moving in the Gadolinium and with less air gap for the flux lines sweeping through the superconductor. This experiment system F leads to a stronger accumulation of the magnetic field trapped in the YBCO bulk. We also tried different ways of sending the thermal waves and found out that the pumping effect is closely related to the power of the heaters and the on and off time. © 2010 IEEE.
Resumo:
This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.
Resumo:
As part of a study of the wear of candidate heat exchanger tube materials for use in fluidized bed combustors, two similar laboratory-scale rigs have been built and characterized. Specimens of selected alloys are carried on counter-rotating rotors immersed in a fluidized bed, and are exposed to particle impact velocities of up to approximately 3 ms-1 at temperatures up to 1000°C. The performance of this design of apparatus has been investigated in detail. The effects of several experimental variables have been studied, including angle of particle impact, specimen speed, position of the rotor within the fluidized bed, duration of exposure, bed material particle size, degradation of the bed material, degree of fluidization of the bed, and size of specimen. In many cases the results obtained with steel specimens at elevated temperatures are similar to those observed with polymeric specimens at low temperatures.
Resumo:
In this paper a novel approach to the design and fabrication of a high temperature inverter module for hybrid electrical vehicles is presented. Firstly, SiC power electronic devices are considered in place of the conventional Si devices. Use of SiC raises the maximum practical operating junction temperature to well over 200°C, giving much greater thermal headroom between the chips and the coolant. In the first fabrication, a SiC Schottky barrier diode (SBD) replaces the Si pin diode and is paired with a Si-IGBT. Secondly, double-sided cooling is employed, in which the semiconductor chips are sandwiched between two substrate tiles. The tiles provide electrical connections to the top and the bottom of the chips, thus replacing the conventional wire bonded interconnect. Each tile assembly supports two IGBTs and two SBDs in a half-bridge configuration. Both sides of the assembly are cooled directly using a high-performance liquid impingement system. Specific features of the design ensure that thermo-mechanical stresses are controlled so as to achieve long thermal cycling life. A prototype 10 kW inverter module is described incorporating three half-bridge sandwich assemblies, gate drives, dc-link capacitance and two heat-exchangers. This achieves a volumetric power density of 30W/cm3.