Trapped charge dynamics in a sol-gel based TiO(2) high- k gate dielectric silicon metal-oxide-semiconductor field effect transistor.

We have studied the response of a sol-gel based TiO(2), high k dielectric field effect transistor structure to microwave radiation. Under fixed bias conditions the transistor shows frequency dependent current fluctuations when exposed to continuous wave microwave radiation. Some of these fluctuations take the form of high Q resonances. The time dependent characteristics of these responses were studied by modulating the microwaves with a pulse signal. The measurements show that there is a shift in the centre frequency of these high Q resonances when the pulse time is varied. The measured lifetime of these resonances is high enough to be useful for non-classical information processing.

High power laser with integrated lens using focused ion beam etching

In this study, a collimating lens is introduced at the output facet of a tapered waveguide laser to compensate for the divergence of the optical mode. The collimating lens is shown to enhance the laser efficiency while simultaneously reducing the far field divergence.

Study of steady state and transient EGR behaviour of a medium duty diesel engine

It is well known that accurate EGR control is paramount to controlling engine out emissions during steady state and transient operation of a diesel engine. The direct measurement of EGR is however non-trivial and especially difficult in engines with no external EGR control where the intake manifold CO2 levels can be measured more readily. This work studies the EGR behaviour in a medium duty diesel engine with a passive EGR rebreathing strategy for steady state and transient operation. High speed (response time ∼1ms) in-cylinder sampling using modified GDI valves is coupled with high frequency response analysers to measure the cyclic in-cylinder CO2, from which the EGR rate is deduced. It was found that controlling the EGR using the passive rebreathing strategy during certain combined speed and load transients is challenging, causing high smoke and NO emissions. The in-cylinder sampling method coupled with fast CO2 measurement (time constant ∼8ms) in the exhaust port gave insights about the EGR rate during these transients. The complex interaction of the manifold pressures, turbo-charger operation and trapped charge composition from the previous cycle simply can cause high dilution and therefore high smoke levels. The steady state variation of NO emissions with respect to EGR is also studied using a fast NO analyzer (time constant ∼2ms) in the exhaust port. Cyclic variation was found to be up to ±5% at some load conditions. © 2008 SAE International.

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Gallium nitride (GaN) has a bright future in high voltage device owing to its remarkable physical properties and the possibility of growing heterostructures on silicon substrates. GaN High Electron Mobility Transistors (HEMTs) are expected to make a strong impact in off line applications and LED drives. However, unlike in silicon-based power devices, the on-state resistance of HEMT devices is hugely influenced by donor and acceptor traps at interfaces and in the bulk. This study focuses on the influence of donor traps located at the top interface between the semiconductor layer and the silicon nitride on the 2DEG density. It is shown through TCAD simulations and analytical study that the 2DEG charge density has an 'S' shape variation with two distinctive 'flat' regions, wherein it is not affected by the donor concentration, and one linear region. wherein the channel density increases proportionally with the donor concentration. We also show that the upper threshold value of the donor concentration within this 'S' shape increases significantly with the AIGaN thickness and the Al mole fraction and is highly affected by the presence of a thin GaN cap layer. © 2013 IEEE.

High-power ultrafast solid-state laser using graphene based saturable absorber

We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation. © 2011 Optical Society of America.

High-power ultrafast solid-state laser using graphene based saturable absorber

We demonstrate a graphene based saturable absorber mode-locked Nd:YVO4 solid-state laser, generating ~14nJ pulses with ~1W average output power. This shows the potential for high-power pulse generation. © 2011 Optical Society of America.