Interpretation of measured profile losses in unsteady wake-turbine blade interaction studies

The interaction of wakes shed by a moving bladerow with a downstream bladerow causes unsteady flow. The meaning of the freestream stagnation pressure and stagnation enthalpy in these circumstances has been examined using simple analyses, measurements and CFD. The unsteady flow in question arises from the behaviour of the wakes as so-called negative-jets. The interactions of the negative-jets with the downstream blades lead to fluctuations in static pressure which in turn generate fluctuations in the stagnation pressure and stagnation enthalpy. It is shown that the fluctuations of the stagnation quantities created by unsteady effects within the bladerow are far greater than those within the incoming wake. The time-mean exit profiles of the stagnation pressure and stagnation enthalpy are affected by these large fluctuations. This phenomenon of energy separation is much more significant than the distortion of the time-mean exit profiles that is caused directly by the cross-passage transport associated with the negative-jet, as described by Kerrebrock and Mikolajczak. Finally, it is shown that if only time-averaged values of loss are required across a bladerow, it is nevertheless sufficient to determine the time-mean exit stagnation pressure.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.