A comparison of methods for the coupled analysis of floating structures

The dynamic analysis of a deepwater floating platform and the associated mooring/riser system should ideally be fully coupled to ensure a reliable response prediction. It is generally held that a time domain analysis is the only means of capturing the various coupling and nonlinear effects accurately. However, in recent work it has been found that for an ultra-deepwater floating system (2000m water depth), the highly efficient frequency domain approach can provide highly accurate response predictions. One reason for this is the accuracy of the drag linearization procedure over both first and second order motions, another reason is the minimal geometric nonlinearity displayed by the mooring lines in deepwater. In this paper, the aim is to develop an efficient analysis method for intermediate water depths, where both mooring/vessel coupling and geometric nonlinearity are of importance. It is found that the standard frequency domain approach is not so accurate for this case and two alternative methods are investigated. In the first, an enhanced frequency domain approach is adopted, in which line nonlinearities are linearized in a systematic way. In the second, a hybrid approach is adopted in which the low frequency motion is solved in the time domain while the high frequency motion is solved in the frequency domain; the two analyses are coupled by the fact that (i) the low frequency motion affects the mooring line geometry for the high frequency motion, and (ii) the high frequency motion affects the drag forces which damp the low frequency motion. The accuracy and efficiency of each of the methods are systematically compared. Copyright © 2007 by ASME.

SOI diode temperature sensor operated at ultra high temperatures-a critical analysis

This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.