On the selective removal of steel by laser-assisted vortex machining

Of all laser-based processes, laser machining has received little attention compared with others such as cutting, welding, heat treatment and cleaning. The reasons for this are unclear, although much can be gained from the development of an effcient laser machining process capable of processing diffcult materials such as high-performance steels and aerospace alloys. Existing laser machining processes selectively remove material by melt shearing and evaporation. Removing material by melting and evaporation leads to very low wall plug effciencies, and the process has difficulty competing with conventional mechanical removal methods. Adopting a laser machining solution for some materials offers the best prospects of effcient manufacturing operations. This paper presents a new laser machining process that relies on melt shear removal provided by a vertical high-speed gas vortex. Experimental and theoretical studies of a simple machining geometry have identifed a stable vortex regime that can be used to remove laser-generated melt effectively. The resultant combination of laser and vortex is employed in machining trials on 43A carbon steel. Results have shown that laser slot machining can be performed in a stable regime at speeds up to 150mm/min with slot depths of 4mm at an incident CO2 laser power level of 600 W. Slot forming mechanisms and process variables are discussed for the case of steel. Methods of bulk machining through multislot machining strategies are also presented.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.

Paper re-use: Toner-print removal by laser ablation

This article explores the possibility of using a laser to remove toner-print from office paper. Removal of print would allow paper to be re-used instead of being recycled or disposed into a landfill. This might reduce climate change gas emissions per tonne of office paper by between 45% and 95%. Although there is little previous research on the area, a number of related articles on paper conservation methods using laser radiation can be found in literature. Different authors have studied the effects of laser energy on blank paper and its application for cleaning soiled paper. However, this study examines toner-print removal from paper by laser ablation. In this article a laser in the visible range is applied to a single toner-paper combination with a range of energy fluences. Results are evaluated by means of colour measurements under the L*a*b* colour space and SEM images. Analysis of the samples reveals that there are parameters under which it is possible to remove toner from paper without causing significant discolouration or damage to the substrate. This means that it is technically possible to remove toner-print for paper re-use.