UbiDM: A new paradigm for product design and manufacturing via ubiquitous computing technology

Since ubiquitous technology was introduced in the early 1980s, it has rapidly developed, and been applied to various domains mainly for the improvement of human life. In this article, the authors propose that ubiquitous computing technology can be effectively used for the design and manufacturing of a product by proposing a new paradigm, called UbiDM (Design and Manufacture via Ubiquitous Computing Technology). The key aspect of UbiDM is the utilisation of the entire product lifecycle information obtained via ubiquitous computing technology for the design and manufacture of the product. The new paradigm can solve many of the problems that have not been properly handled by previous manufacturing paradigms. Specifically, it will address the concept of UbiDM by the following aspects: (1) why there is a need for UbiDM; (2) the essence of UbiDM; (3) enabling technologies; (4) application area; (5) worldwide RD status; and (6) the societal impacts of UbiDM.

Analysis on the off-state design and characterization of LIGBTs in partial SOI technology

Classical high voltage devices fabricated on SOI substrates suffer from a backside coupling effect which could result in premature breakdown. This phenomenon becomes more prominent if the structure is an IGBT which features a p-type injector. To suppress the premature breakdown due to crowding of electro-potential lines within a confined SOI/buried oxide structure, the partial SOI (PSOI) technique is being introduced. This paper analyzes the off-state behavior of an n-type Superjunction (SJ) LIGBT fabricated on PSOI substrate. During the initial development stage the SJ LIGBT was found to have very high leakage. This was attributed to the back and side coupling effects. This paper discusses these effects and shows how this problem could be successfully addressed with minimal modifications of device layout. The off-state performance of the SJ LIGBT at different temperatures is assessed and a comparison to an equivalent LDMOSFET is given. © 2014 Elsevier Ltd. All rights reserved.