How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

High mobility N-channel and P-channel nanocrystalline silicon thin-film transistors

We report high hole and electron mobilities in nanocrystalline silicon (nc-Si:H) top-gate staggered thin-film transistors (TFTs) fabricated by direct plasma-enhanced chemical vapor deposition (PECVD) at 260°C. The n-channel nc-Si:H TFT with n+ nc-Si:H ohmic contacts shows a field-effect electron mobility (μnFE) of 130 cm2/Vs, which increases to 150 cm2/Vs with Cr-silicide contacts, along with a field-effect hole mobility (μhFE) of 25 cm2/Vs. To the best of our knowledge, the hole and electron mobilities reported here are the highest achieved to date using direct PECVD. © 2005 IEEE.

Effect of microbial activities on the mobility of copper in stabilised contaminated soil

Stabilisation, using a wide range of binders including wastes, is most effective for heavy metal soil contamination. Bioremediation techniques, including bioaugmentation to enhance soil microbial population, are most effective for organic contaminants in the soil. For mixed contaminant scenarios a combination of these two techniques is currently being investigated. An essential issue in this combined remediation system is the effect of microbial processes on the leachability of the heavy metals. This paper considers the use of zeolite and compost as binder additives combined with bioaugmentation treatments and their effect on copper leachability in a model contaminated soil. Different leaching test conditions are considered including both NRA and TCLP batch leaching tests as well as flow-through column tests. Two flow rates are applied in the flow-through tests and the two leaching tests are compared. Recommendations are given as to the effectiveness of this combined remediation technique in the immobilisation of copper. © 2005 Taylor & Francis Group.