32 resultados para ddc: 510
Resumo:
A new, and very simple spectrometer based on birefringent fiber is described. A resolution of 0.02 angstrom has been achieved, and the system has been used to measure diode laser chirp. A length of 10km of fiber would be sufficient to resolve single mode line widths.
Resumo:
Stabilisation/solidification (S/S) is an effective technique for reducing the leachability of contaminants in soils. Very few studies have investigated the use of ground granulated blast furnace slag (GGBS) for S/S treatment of contaminated soils, although it has been shown to be effective in ground improvement. This study sought to investigate the potential of GGBS activated by cement and lime for S/S treatment of a mixed contaminated soil. A sandy soil spiked with 3000mg/kg each of a cocktail of heavy metals (Cd, Ni, Zn, Cu and Pb) and 10,000mg/kg of diesel was treated with binder blends of one part hydrated lime to four parts GGBS (lime-slag), and one part cement to nine parts GGBS (slag-cement). Three binder dosages, 5, 10 and 20% (m/m) were used and contaminated soil-cement samples were compacted to their optimum water contents. The effectiveness of the treatment was assessed using unconfined compressive strength (UCS), permeability and acid neutralisation capacity (ANC) tests with determination of contaminant leachability at the different acid additions. UCS values of up to 800kPa were recorded at 28days. The lowest coefficient of permeability recorded was 5×10(-9)m/s. With up to 20% binder dosage, the leachability of the contaminants was reduced to meet relevant environmental quality standards and landfill waste acceptance criteria. The pH-dependent leachability of the metals decreased over time. The results show that GGBS activated by cement and lime would be effective in reducing the leachability of contaminants in contaminated soils.
Resumo:
Nanocluster carbon films grown using a cathodic arc process at room temperature in the presence of background gases such as helium are found to be good electron emitters. The variation in the surface morphology and the corresponding emission characteristics of the films with change in helium partial pressure (5×10-4 to 50 Torr) during film growth are reported. The effect of helium partial pressure on clustering was studied for films grown at nitrogen partial pressures of 10-4 and 10-3 Torr. The surface morphology of the films varied from smooth through clusters (with sizes 50-200 nm) to fibrous films. The threshold field varied from 1 to 10 V/μm for an emission current density 1 μA/cm2.
Resumo:
We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching - a well-established technique for optical mask repair and for IC failure analysis and repair - without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5×10 -4μm3/pC. At a current of 3nA, for example, this corresponds to an etch rate of 1.05μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1μm. Changes in the roughness of the etched surface plane stay below 8nm.
Resumo:
Combustion oscillations in gas turbines can result in serious damage. One method used to predict such oscillations is to analyze the combustor acoustics using a simple linear model. Such a model requires a flame transfer function to describe the response of the heat release to flow perturbations inside the combustor. This paper reports on the application of Planar Laser Induced Fluorescence (PLIF) of OH radicals to analyze the response of a lean premixed flame to oncoming flow perturbations. Both self-excited oscillations and low amplitude forced oscillations at various frequencies are investigated in an atmospheric pressure model combustor rig. In order to visualize fluctuations of local fuel distribution, acetone-PLIF was also applied in non-reacting and acoustically forced flows at oscillation frequencies of 200 Hz and 510 Hz, respectively. OH-PLIF images were acquired over a range of operating parameters. The results presented in this paper originate from data sets acquired at fixed phase angles during the oscillation cycle. Comparative experiments in self excited and forced acoustic oscillations show that the flame and the combustion intensity develop similarly throughout the pressure cycle in both cases. Although the peak fluorescence intensities differ between self excited and the forced instabilities, there is a clear correspondence in the observed frequency and phase information from the two cases. This result encourages a comparison of the OH-PLIF and the acetone-PLIF results. Quantitative measurements of the equivalence ratio in specific areas of the measurement plane offer insight on the complex phenomena coupling acoustic perturbations, i.e. flow velocity fluctuations, to fluctuations in fuel distribution and combustion intensity, ultimately resulting in self excited combustion oscillations.
Resumo:
Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these growth parameters, one can tune the emission wavelength of InP NWs which is attractive for applications in developing novel optoelectronic devices. © 2010 IEEE.
Resumo:
The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.
Resumo:
Room-temperature tunable excitonic photoluminescence is demonstrated in alloy-tuned layered Inorganic-Organic (IO) hybrids, (C12H 25NH3)2PbI4(1-y)Br4y (y = 0 to 1). These perovskite IO hybrids adopt structures with alternating stacks of low-dimensional inorganic and organic layers, considered to be naturally self-assembled multiple quantum wells. These systems resemble stacked monolayer 2D semiconductors since no interlayer coupling exists. Thin films of IO hybrids exhibit sharp and strong photoluminescence (PL) at room-temperature due to stable excitons formed within the low-dimensional inorganic layers. Systematic variation in the observed exciton PL from 510 nm to 350 nm as the alloy composition is changed, is attributed to the structural readjustment of crystal packing upon increase of the Br content in the Pb-I inorganic network. The energy separation between exciton absorption and PL is attributed to the modified exciton density of states and diffusion of excitons from relatively higher energy states corresponding to bromine rich sites towards the lower energy iodine sites. Apart from compositional fluctuations, these excitons show remarkable reversible flips at temperature-induced phase transitions. All the results are successfully correlated with thermal and structural studies. Such structural engineering flexibility in these hybrids allows selective tuning of desirable exciton properties within suitable operating temperature ranges. Such wide-range PL tunability and reversible exciton switching in these novel IO hybrids paves the way to potential applications in new generation of optoelectronic devices. © 2013 AIP Publishing LLC.