Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Efficient carbon nanotube field emitter using electrospun carbon nanofibers as a flexible electrode

Thermal-stable, conductive, and flexible carbon fabric (CF), which is composed of thin carbon fibers prepared by electrospinning, was used for the substrate of carbon nanotube (CNT) field emitter arrays. The field emitter arrays were prepared by chemical vapor deposition (CVD). The current density-electric field characteristics revealed that the CNT field emitter arrays on CF produced a higher current density at a lower turn-on voltage compared to ones on a Si substrate. This emitter integrated with a gate electrode based on hierarchy-structured carbon materials, CNTs on CF, can be used for light sources, displays, and other electronic devices. © 2009 Materials Research Society.

Unexpected controllable pair-structure in ferroelectric nanodomains.

The imminent inability of silicon-based memory devices to satisfy Moore's Law is approaching rapidly. Controllable nanodomains of ferroic systems are anticipated to enable future high-density nonvolatile memory and novel electronic devices. We find via piezoresponse force microscopy (PFM) studies on lead zirconate titanate (PZT) films an unexpected nanostructuring of ferroelectric-ferroelastic domains. These consist of c-nanodomains within a-nanodomains in proximity to a-nanodomains within c-domains. These structures are created and annihilated as pairs, controllably. We treat these as a new kind of vertex-antivertex pair and consider them in terms of the Srolovitz-Scott 4-state Potts model, which results in pairwise domain vertex instabilities that resemble the vortex-antivortex mechanism in ferromagnetism, as well as dislocation pairs (or disclination pairs) that are well-known in nematic liquid crystals. Finally, we show that these nanopairs can be scaled up to form arrays that are engineered at will, paving the way toward facilitating them to real technologies.

Deposition of diamond-like carbon films by photon-enhanced chemical vapour deposition of methane using a windowless hydrogen lamp

Thin films of diamond-like carbon (DLC) have been deposited using a novel photon-enhanced chemical vapour deposition (photo-CVD) method. This low energy method may be a way to produce better interfaces in electronic devices by reducing damage due to ion bombardment. Methane requires high energy photons for photolysis to take place and these are not transmitted in most photo-CVD methods owing to the presence of a window between the lamp and the deposition environment. In our photo-CVD system there is no window and all the high energy photons are transmitted into the reaction gas. Initial work has proved promising and this paper presents recent results. Films have been characterized by measuring electron energy loss spectra, by ellipsometry and by fabricating and testing diode structures. Results indicate that the films are of a largely amorphous nature and are semiconducting. Diode structures have on/off current ratios of up to 106.

Compositional analysis of thin film amorphous semiconductors and insulators using LIMA

LIMA (Laser-induced Ion Mass Analysis) is a new technique capable of compositional analysis of thin films and surface regions. Under UHV conditions a focused laser beam evaporates and ionizes a microvolume of specimen material from which a mass spectrum is obtained. LIMA has been used to examine a range of thin film materials with applications in electronic devices. The neutral photon probe avoids charging problems, and low conductivity materials are examined without prior metallization. Analyses of insulating silicon oxides, nitrides, and oxynitrides confirm estimates of composition from infrared measurements. However, the hydrogen content of hydrogenated amorphous silicon (a-Si : H) found by LIMA shows no correlation with values given by infrared absorption analysis. Explanations are proposed and discussed. © 1985.

Imbibition dynamics of nano-particulate ink-jet drops on micro-porous media

Ink-jet printing of nano-metallic colloidal fluids on to porous media such as coated papers has become a viable method to produce conductive tracks for low-cost, disposable printed electronic devices. However, the formation of well-defined and functional tracks on an absorbing surface is controlled by the drop imbibition dynamics in addition to the well-studied post-impact drop spreading behavior. This study represents the first investigation of the real-time imbibition of ink-jet deposited nano-Cu colloid drops on to coated paper substrates. In addition, the same ink was deposited on to a non-porous polymer surface as a control substrate. By using high-speed video imaging to capture the deposition of ink-jet drops, the time-scales of drop spreading and imbibition were quantified and compared with model predictions. The influences of the coating pore size on the bulk absorption rate and nano-Cu particle distribution have also been studied.

Designing inclusive interfaces through user modeling and simulation

Elderly and disabled people can be hugely benefited through the advancement of modern electronic devices, as those can help them to engage more fully with the world. However, existing design practices often isolate elderly or disabled users by considering them as users with special needs. This article presents a simulator that can reflect problems faced by elderly and disabled users while they use computer, television, and similar electronic devices. The simulator embodies both the internal state of an application and the perceptual, cognitive, and motor processes of its user. It can help interface designers to understand, visualize, and measure the effect of impairment on interaction with an interface. Initially a brief survey of different user modeling techniques is presented, and then the existing models are classified into different categories. In the context of existing modeling approaches the work on user modeling is presented for people with a wide range of abilities. A few applications of the simulator, which shows the predictions are accurate enough to make design choices and point out the implication and limitations of the work, are also discussed. © 2012 Copyright Taylor and Francis Group, LLC.

Nanowires for energy generation

As a result of their morphology, nanowires bring new properties and the promise of performance for a range of electronic devices. This review looks into the properties of nanowires and the multiple ways in which they have been exploited for energy generation, from photovoltaics to piezoelectric generators. © 2012 IOP Publishing Ltd.

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.

Using transient terahertz photoconductivity measurements, we have made noncontact, room temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP nanowires exhibited a very long photoconductivity lifetime of over 1 ns, and carrier lifetimes were remarkably insensitive to surface states despite the large nanowire surface area-to-volume ratio. An exceptionally low surface recombination velocity (170 cm/s) was recorded at room temperature. These results suggest that InP nanowires are prime candidates for optoelectronic devices, particularly photovoltaic devices, without the need for surface passivation. We found that the carrier mobility is not limited by nanowire diameter but is strongly limited by the presence of planar crystallographic defects such as stacking faults in these predominantly wurtzite nanowires. These findings show the great potential of very narrow InP nanowires for electronic devices but indicate that improvements in the crystallographic uniformity of InP nanowires will be critical for future nanowire device engineering.

A survey on technology exposure and range of abilities of elderly and disabled users in India

This paper reports a survey on people with age-related and physical impairments in India. The survey evaluates functional parameters related to human computer interaction and reports subjective attitude and exposure of users towards technology. We found a significant cognitive decline in elderly users while their functional parameters are sufficient to use existing electronic devices. However young disabled users are found to be experienced with computer but could not have access to appropriate assistive devices, which would benefit them. Most users used desktop computers and mobile phone but none used tablet, smartphone or kiosks though they are keen to learn new technologies. Overall we hope that our results will be useful for HCI practitioners in developing countries. © 2013 Springer-Verlag Berlin Heidelberg.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

Hierarchically structured nanocarbon electrodes for flexible solid lithium batteries

The ever increasing demand for storage of electrical energy in portable electronic devices and electric vehicles is driving technological improvements in rechargeable batteries. Lithium (Li) batteries have many advantages over other rechargeable battery technologies, including high specific energy and energy density, operation over a wide range of temperatures (-40 to 70. °C) and a low self-discharge rate, which translates into a long shelf-life (~10 years) [1]. However, upon release of the first generation of rechargeable Li batteries, explosions related to the shorting of the circuit through Li dendrites bridging the anode and cathode were observed. As a result, Li metal batteries today are generally relegated to non-rechargeable primary battery applications, because the dendritic growth of Li is associated with the charging and discharging process. However, there still remain significant advantages in realizing rechargeable secondary batteries based on Li metal anodes because they possess superior electrical conductivity, higher specific energy and lower heat generation due to lower internal resistance. One of the most practical solutions is to use a solid polymer electrolyte to act as a physical barrier against dendrite growth. This may enable the use of Li metal once again in rechargeable secondary batteries [2]. Here we report a flexible and solid Li battery using a polymer electrolyte with a hierarchical and highly porous nanocarbon electrode comprising aligned multiwalled carbon nanotubes (CNTs) and carbon nanohorns (CNHs). Electrodes with high specific surface area are realized through the combination of CNHs with CNTs and provide a significant performance enhancement to the solid Li battery performance. © 2013 Elsevier Ltd.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.