Re-examination of the coefficient of determination (r2) using road materials engineering case studies

The analysis of scientific data is integral to materials engineering and science. The correlation between measured variables is often quantified by estimating the coefficient of determination or the r2 value. This is the recognised procedure for determining linear relationships. The authors review the derivation of the r2 value and derive an associated quantity, termed the relative deviation (RD), which is the ratio of the root mean square of the deviations about the fitted line to the root mean square of the deviations about the y bar line expressed as a percentage. The relative deviation has an advantage over the coefficient of determination in that it has greater numerical sensitivity to changes in the spread of data about the fitted line, especially when the scatter is small. In addition, the relative deviation is able to define, in percentage terms, the reduction in scatter when different independent variables are correlated with a common dependent variable. Four case studies in the materials field (aggregate crushing value, Atterberg limits, permeability and creep of asphalt) from work carried out at the Queensland Main Roads Department are presented to show the use of the new parameter RD.

Improved switching uniformity and low-voltage operation in TaO x-based RRAM using Ge reactive layer

Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated in Ge/TaOx bilayer-based resistive switching devices, as compared with non-Ge devices. In addition, the reported Ge/TaOx devices also show significant reductions in the operation voltages. Influence of the Ge layer on the resistive switching of TaOx-based resistive random access memory is investigated by X-ray spectroscopy and the theory of Gibbs free energy. Higher uniformity is attributed to the confinement of the filamentary switching process. The presence of a larger number of interface traps, which will create a beneficial electric field to facilitate the drift of oxygen vacancies, is believed to be responsible for the lower operation voltages in the Ge/TaO x devices. © 1980-2012 IEEE.