SOI diode temperature sensor operated at ultra high temperatures-a critical analysis

This paper investigates the performance of diode temperature sensors when operated at ultra high temperatures (above 250°C). A low leakage Silicon On Insulator (SOI) diode was designed and fabricated in a 1 μm CMOS process and suspended within a dielectric membrane for efficient thermal insulation. The diode can be used for accurate temperature monitoring in a variety of sensors such as microcalorimeters, IR detectors, or thermal flow sensors. A CMOS compatible micro-heater was integrated with the diode for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We have proven experimentally that the maximum temperature can be as high as 550°C. Long term continuous operation at high temperatures (400°C) showed good stability of the voltage drop. Furthermore, we carried out a detailed theoretical analysis to determine the maximum operating temperature and exlain the presence of nonlinearity factors at ultra high temperatures. © 2008 IEEE.

Long-term changes and variability of monthly extreme temperatures in India

Extreme temperatures are changing worldwide together with changes in the mean temperatures. This study investigates the long-term trends and variations of the monthly maximum and minimum temperatures and their effects on seasonal fluctuations in various climatological regions in India. The magnitude of the trends and their statistical significance were determined by parametric ordinary least square regression techniques and the variations were determined by the respective coefficient of variations. The results showed that the monthly maximum temperature increased, though unevenly, over the last century. Minimum temperature changes were more variable than maximum temperature changes, both temporally and spatially, with results of lesser significance. The results of this study are good indicators of Indian climate variability and its changes over the last century. © Springer-Verlag 2009.

The Ic behavior of 2G YBCO tapes under DC/AC magnetic fields at various temperatures

In order to design a High Temperature Superconducting (HTS) machine that is able to operate safely and reliably, studies on the characterization of Second Generation (2G) HTS tapes are of paramount importance. This paper presents an experimental setup to measure critical current of 2G HTS tapes in high DC magnetic fields (up to 5 Tesla) with an AC current ripple superimposed, as well as various temperatures ranging from 25 K to 77 K. The 2G tape measured is the SGS12050 coated conductor made by SuperPower. The critical current is measured by a flux vector with reference to the widest sample face from 0 to 90 degrees in 10 degree steps. Smaller steps are required close to 0 . A Variable Temperature Insert (VTI) is utilized to control temperature change. © 2010 IEEE.

Accelerated ageing of a stabilised/solidified contaminated soil at elevated temperatures

Despite the widespread use of stabilisation/solidification (S/S) techniques, the validation and the availability of predictive modelling of the behaviour of stabilised/solidified soils in the longer-term is very limited. The authors were involved in the assessment of the behaviour of a contaminated site in the UK treated with cement-based in-situ S/S over the first five years after treatment. In parallel, two experimental methods, namely elevated temperatures and combined elevated temperatures and accelerated carbonation, were used in the laboratory to model accelerated ageing of the site soil. A graphical technique, based on the Arrhenius equation, was then used to model the laboratory observations and the in-situ five-year behaviour. The paper presents the details of the two experimental methods used for the accelerated ageing of stabilised/solidified model site soil, the numerical predictive model and a comparison between the results of the two experimental techniques and with the site results. © 2005 Taylor & Francis Group.

Kinetic control of catalytic CVD for high-quality graphene at low temperatures.

Low-temperature (∼600 °C), scalable chemical vapor deposition of high-quality, uniform monolayer graphene is demonstrated with a mapped Raman 2D/G ratio of >3.2, D/G ratio ≤0.08, and carrier mobilities of ≥3000 cm(2) V(-1) s(-1) on SiO(2) support. A kinetic growth model for graphene CVD based on flux balances is established, which is well supported by a systematic study of Ni-based polycrystalline catalysts. A finite carbon solubility of the catalyst is thereby a key advantage, as it allows the catalyst bulk to act as a mediating carbon sink while optimized graphene growth occurs by only locally saturating the catalyst surface with carbon. This also enables a route to the controlled formation of Bernal stacked bi- and few-layered graphene. The model is relevant to all catalyst materials and can readily serve as a general process rationale for optimized graphene CVD.