Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Fabrication of diamond based schottky barrier diodes with oxide ramp termination

The paper's goal is the first demonstration of the fabrication of high power Schottky diodes on synthetic diamond using oxide ramp termination. In order to allow full activated impurities at room temperature and a high hole mobility a low boron doping of the drift layer is employed. Several aspects of the manufacturing technology are presented. A termination with a small ramp angle can be obtained using only RIE technique due to diamond wafer nonuniformity (roughness). Experimental forward and reverse characteristics measured on diamond diodes are also included. © 2007 IEEE.

Compact three-dimensional silicon termination solutions for high voltage SOI SuperJunction

This paper demonstrates and discusses novel "three dimensional" silicon based junction isolation/termination solutions suitable for high density ultra-low-resistance Lateral Super-Junction structures. The proposed designs are both compact and effective in safely distributing the electrostatic potential away from the active device area. The designs are based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The study/demonstration is done through extensive experimental measurements and numerical simulations. © 2012 IEEE.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.

The influence of stacks on flow patterns and stratification associated with natural ventilation

We investigate the steady state natural ventilation of an enclosed space in which vent A, located at height hA above the floor, is connected to a vertical stack with a termination at height H, while the second vent, B, at height hB above the floor, connects directly to the exterior. We first examine the flow regimes which develop with a distributed source of heating at the base of the space. If hBhB>hA, then two different flow regimes may develop. Either (i) there is inflow through vent B and outflow through vent A, or (ii) the flow reverses, with inflow down the stack into vent A and outflow through vent B. With inflow through vent A, the internal temperature and ventilation rate depend on the relative height of the two vents, A and B, while with inflow through vent B, they depend on the height of vent B relative to the height of the termination of the stack H. With a point source of heating, a similar transition occurs, with a unique flow regime when vent B is lower than vent A, and two possible regimes with vent B higher than vent A. In general, with a point source of buoyancy, each steady state is characterised by a two-layer density stratification. Depending on the relative heights of the two vents, in the case of outflow through vent A connected to the stack, the interface between these layers may lie above, at the same level as or below vent A, leading to discharge of either pure upper layer, a mixture of upper and lower layer, or pure lower layer fluid. In the case of inflow through vent A connected to the stack, the interface always lies below the outflow vent B. Also, in this case, if the inflow vent A lies above the interface, then the lower layer becomes of intermediate density between the upper layer and the external fluid, whereas if the interface lies above the inflow vent A, then the lower layer is composed purely of external fluid. We develop expressions to predict the transitions between these flow regimes, in terms of the heights and areas of the two vents and the stack, and we successfully test these with new laboratory experiments. We conclude with a discussion of the implications of our results for real buildings.

Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.

Wavelength reused bidirectional transmission of adaptively modulated optical OFDM signals in WDM-PONs incorporating SOA and RSOA intensity modulators.

Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a colorless WDM-PON incorporating a semiconductor optical amplifier (SOA) intensity modulator and a reflective SOA (RSOA) intensity modulator in the optical line termination and optical network unit, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5 Gb/s. It is shown that the RB noise and crosstalk effects are dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10 Gb/s downstream and 6 Gb/s upstream over 40 km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing in-line optical amplification and chromatic dispersion compensation. In particular, the aforementioned transmission performance can be improved to 23 Gb/s downstream and 8 Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Opponent appetitive-aversive neural processes underlie predictive learning of pain relief.

Termination of a painful or unpleasant event can be rewarding. However, whether the brain treats relief in a similar way as it treats natural reward is unclear, and the neural processes that underlie its representation as a motivational goal remain poorly understood. We used fMRI (functional magnetic resonance imaging) to investigate how humans learn to generate expectations of pain relief. Using a pavlovian conditioning procedure, we show that subjects experiencing prolonged experimentally induced pain can be conditioned to predict pain relief. This proceeds in a manner consistent with contemporary reward-learning theory (average reward/loss reinforcement learning), reflected by neural activity in the amygdala and midbrain. Furthermore, these reward-like learning signals are mirrored by opposite aversion-like signals in lateral orbitofrontal cortex and anterior cingulate cortex. This dual coding has parallels to 'opponent process' theories in psychology and promotes a formal account of prediction and expectation during pain.

Design trade-offs for energy regeneration and control in vehicle suspensions

This paper investigates the fundamental trade-offs involved in designing energy-regenerative suspensions, in particular, focusing on efficiency of power extraction and its effect on vehicle dynamics and control. It is shown that typical regenerative devices making use of linear-to-rotational elements can be modelled as a parallel arrangement of an inerter and a dissipative admittance. Taking account of typical adjustable parameters of the generator, it is shown, for a given suspension damping coefficient, that the power efficiency ratio scales with inertance. For a typical passenger vehicle, it is shown that there is a feasible compromise, namely that good efficiency is achievable with an inertance value that is not detrimental to vehicle performance. A prototype is designed and tested with a resistive termination and experimental results show good agreement between ideal and experimental admittances. The possibility to use dynamic (rather than purely resistive) loads to improve vehicle control without limiting the energy recovery is discussed. © 2013 Copyright Taylor and Francis Group, LLC.