Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.

The effect of surface hardening on the elastic shakedown of elliptical contacts

The effect of varying both the aspect ratio and the coefficient of friction of contacts with elliptical geometry on their elastic shakedown performance has been examined theoretically for surfaces with two types of subsurface hardness or strength profiles. In stepwise hardening the hard layer is of uniform strength while in linear hardening its strength reduces from a maximum at the surface to that of the core at the base of the hardened layer. The shakedown load is expressed as the ratio of the maximum Hertzian pressure to the strength of the core material. As the depth of hardening, expressed as a multiple of the elliptical semi-axis, is increased so the potential shakedown load increases from a level that is appropriate to a uniform half-space of unhardened material to a value reflecting the hardness of the surface and near-surface material. In a step-hardened material, the shakedown limit for a surface 'pummelled' by the passage of a sequence of such loads reaches a cut-off or plateau value, which cannot be exceeded by further increases in hardening depth irrespective of the value of the friction coefficient. For a linear-hardened material the corresponding plateau is approached asymptotically. The work confirms earlier results on the upper bounds on shakedown of both point and line contacts and provides numerical values of shakedown loads for intermediate geometries. In general, the case depth required to achieve a given shakedown limit reduces in moving from a transversely moving nominal line load to an axisymmetric point load.

Secondary flow near an undulatory surface induced by wall blocking effect

Prandtl's secondary mean motions of the second kind near an undulating surface were explained in terms of turbulent blocking effect and kinematic boundary conditions at the surface, and its order of magnitude was estimated. Isotropic turbulence is distorted by the undulating surface of wavelength λ and amplitude h with a low slope, so that h « λ. The prime mechanism for generating the mean flow is that the far-field Isotropic turbulence is distorted by the non-local blocking effect of the surface to become anisotropic axisymmetric turbulence near the surface with principal axis that is not aligned with the local curvature of the undulation. Then the local analysis can be applied and the mechanism is similar to the mean flow generation mechanism for homogeneous axisymmetric turbulence over a planer surface, i.e. gradients of the Reynolds stress caused by the turbulent blocking effect generate the mean motions. The results from this simple analysis are consistent with previous exact analysis in which the effects of curvature are strictly taken into account. The results also qualitatively agree with flow visualization over an undulating surface in a mixing-box.