Analysis of SEB and SEGR in super-junction MOSFETs

The electric field distribution in the super junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burn-out (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained.

Dynamic modulation of detection window in conducting polymer based biosensors.

Here we demonstrate a novel application that employs the ion exchange properties of conducting polymers (CP) to modulate the detection window of a CP based biosensor under electrical stimuli. The detection window can be modulated by electrochemically controlling the degree of swelling of the CP associated with ion transport in and out of the polymer. We show that the modulation in the detection window of a caffeine imprinted polypyrrole biosensor, and by extension other CP based biosensors, can be achieved with this mechanism. Such dynamic modulation in the detection window has great potential for the development of smart biosensors, where the sensitivity of the sensor can be dynamically optimized for a specific test solution.