Erosion-corrosion of mild steel in a temperature gradient

Thinning of heat-exchanger tubes by erosion-corrosion has been a problem in fluidized bed combustors (FBCs), particularly at lower metal temperatures where thicker, mechanically protective oxide scales are unable to form. Many laboratory-scale tests have shown a decrease in material loss at higher temperatures, in a similar manner to FBC boilers, but also show a decrease in wastage at low temperatures (e.g. 200°C) which has not been detected in boilers. It has been suggested that this difference is due to laboratory tests being carried out isothermally whereas in a FBC boiler the fluidized bed is considerably hotter than the metal heat exchanger tubing. In this laboratory study the simulation was therefore improved by internally cooling one of the two low carbon steel specimens. These were rotated in a horizontal plane within a lightly fluidized bed with relative particle velocities of 1.3-2.5 m s-1. Tests were carried out over a range of bed temperatures (200-500°C) and cooled specimen surface temperatures (115-500°C), with a maximum temperature difference between the two of 320°C. Although specimens exposed isothermally still showed maximum wastage at intermediate temperatures (about 350°C), those which were cooled showed high levels of wastage at temperatures as low as 200°C in a similar manner to FBC boilers. Cooling may modify the isothermal erosion-corrosion curve, causing it to broaden and the maximum wastage rate to shift to lower temperatures. © 1995.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.