Demonstration of multi-casting in a 1 × 9 LCOS wavelength selective switch

A multi-functional 1 × 9 wavelength selective switch based on liquid crystal on silicon (LCOS) spatial light modulator technology and anamorphic optics was tested at a channel spacing of 100 and 200 GHz, including dynamic data measurements on both single beam deflection and multi-casting to two ports. The multi-casting holograms were optimized using a modified Gerchberg-Saxton routine to design the core hologram, followed by a simulated annealing routine to reduce crosstalk at non-switched ports. The effect of clamping the magnitude of phase changes between neighboring pixels during optimization was investigated, with experimental results for multi-casting to two ports resulting in a signal insertion loss of-7.6 dB normalized to single port deflection, a uniformity of ±0.6%, and a worst case crosstalk of-19.4 dB, which can all be improved further by using a better anti-reflection coating on the LCOS SLM coverplate and other measures. © 2013 IEEE.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Some observations describing the electrochemical surface annealing of austenitic stainless steel

Cold-worked austenitic stainless steels have been subject to a pulsed electrochemical treatment in fairly concentrated aqueous solutions of sodium nitrite. The electrochemical reactions that occur transform the strain-induced martensite phase, originally formed by the cold work, back to the austenite phase. However, unlike the conventional thermal annealing process, electrochemically induced surface annealing also hardens the surface of the alloy. Because the process causes transformation of the surface martensite, we term it "electrochemical surface annealing", despite the fact that it results in an increase in surface hardness.

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

A comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out. Complete stress relief occurs at 600-700°C and is accompanied by minimal structural modifications, as indicated by electron energy loss spectroscopy, Raman spectroscopy, and optical gap measurements. Further annealing in vacuum converts sp3 sites to sp2 with a drastic change occurring after 1100°C. The field emitting behavior is substantially retained up to the complete stress relief, confirming that ta-C is a robust emitting material. © 1999 American Institute of Physics.