A laboratory-scale buried charge simulator

An experimental technique has been developed in order to mimic the effect of landmine loading on materials and structures to be studied in a laboratory setting, without the need for explosives. Compressed gas is discharged beneath a sand layer, simulating the dynamic flow generated by a buried explosive. High speed photography reveals that the stages of soil motion observed during a landmine blast are replicated. The effect of soil saturation and the depth of the sand layer on sand motion are evaluated. Two series of experiments have been performed with the buried charge simulator to characterise subsequent impact of the sand. First, the time variation in pressure and impulse during sand impact on a stationary target is evaluated using a Kolsky bar apparatus. It is found that the pressure pulse imparted to the Kolsky bar consists of two phases: an initial transient phase of high pressure (attributed to wave propagation effects in the impacting sand), followed by a lower pressure phase of longer duration (due to lateral flow of the sand against the Kolsky bar). Both phases make a significant contribution to the total imparted impulse. It is found that wet sand exerts higher peak pressures and imparts a larger total impulse than dry sand. The level of imparted impulse is determined as a function of sand depth, and of stand-off distance between the sand and the impacted end of the Kolsky bar. The second study uses a vertical impulse pendulum to measure the momentum imparted by sand impact to a target which is free to move vertically. The effect of target mass upon imparted momentum is investigated. It is concluded that the laboratory-scale sand impact apparatus is a flexible tool for investigating the interactions between structures and dynamic sand flows. © 2013 Elsevier Ltd. All rights reserved.

Identification of the steering control behaviour of five test subjects following a randomly curving path in a driving simulator

The paper is concerned with the identification of theoretical preview steering controllers using data obtained from five test subjects in a fixed-base driving simulator. An understanding of human steering control behaviour is relevant to the design of autonomous and semi-autonomous vehicle controls. The driving task involved steering a linear vehicle along a randomly curving path. The theoretical steering controllers identified from the data were based on optimal linear preview control. A direct-identification method was used, and the steering controllers were identified so that the predicted steering angle matched as closely as possible the measured steering angle of the test subjects. It was found that identification of the driver's time delay and noise is necessary to avoid bias in identification of the controller parameters. Most subjects' steering behaviour was predicted well by a theoretical controller based on the lateral/yaw dynamics of the vehicle. There was some evidence that an inexperienced driver's steering action was better represented by a controller based on a simpler model of the vehicle dynamics, perhaps reflecting incomplete learning by the driver. Copyright © 2014 Inderscience Enterprises Ltd.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Muitiobjective pressurized water reactor reload core design by nondominated genetic algorithm search

The design of pressurized water reactor reload cores is not only a formidable optimization problem but also, in many instances, a multiobjective problem. A genetic algorithm (GA) designed to perform true multiobjective optimization on such problems is described. Genetic algorithms simulate natural evolution. They differ from most optimization techniques by searching from one group of solutions to another, rather than from one solution to another. New solutions are generated by breeding from existing solutions. By selecting better (in a multiobjective sense) solutions as parents more often, the population can be evolved to reveal the trade-off surface between the competing objectives. An example illustrating the effectiveness of this novel method is presented and analyzed. It is found that in solving a reload design problem the algorithm evaluates a similar number of loading patterns to other state-of-the-art methods, but in the process reveals much more information about the nature of the problem being solved. The actual computational cost incurred depends: on the core simulator used; the GA itself is code independent.

A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.

Comparison of different scheduling techniques for H-infinity controllers

Several approaches to designing schedule H-infinity control systems are compared. These include a controller switching approach and also parameter scheduling of an observer representation of the controller. They are illustrated by application to a Generic VSTOI. Aircraft Model (GVAM) supplied by The Royal Aerospace Establishment (RAE) at Bedford. The switched design has been tested on the simulator at RAE Bedford. The linear H-infinity designs make use of a loop-shaping followed by robust stabilisation to additive perturbations of a normalised coprime factorisation of the shaped plans. The different scheduling approaches are compared with respect to achieved robust stability levels. performance and complexity of implementation.

Accurate GTO model for circuit simulations

The GTO model presented in this paper uses analytical expressions to describe the internal physics of the device. It has been implemented to run as compiled code in the SPICE simulation package and as a MAST template in the Saber simulator. A rigorous comparison of measured simulated waveforms and performance parameters (including turn-off energies) for a 3000A device is described and discussed.

Stepped gate polysilicon thin film transistor for large area power applications

For the first time, we report a new poly-Si stepped gate Thin Film Transistor (SG TFT) on glass. The Density of States extracted from measured I-V characteristics has been used to evaluate the device performance with a two dimensional device simulator. The results show that the three-terminal SG TFT device has a switching speed comparable to a low voltage structure and the high on-current capability of a metal field plate (MFP) TFT and the potential for comparable breakdown characteristics.

Theoretical and numerical investigation of SiC JFET and MOSFET at 6.5 kV

This paper presents a preliminary theoretical and numerical investigation of 4H-SiC JFET and MOSFET at 6.5 kV. To improve the on-state/breakdown performance of the JFET, buried layers in conjunction with a highly doped buffer layer have been used. Trench technology has been employed for the MOSFET. The devices were simulated and optimized using MEDICI[I] simulator. From the comparison between the two devices, it turns out that the JFET offers a better on-state/breakdown trade-off, while the trench MOSFET has the advantage of MOS-control.

Analytical model for the 3D-RESURF effect

This paper presents an analytical model for the determination of the basic breakdown properties of three-dimensional (3D)-RESURF/CoolMOS/super junction type structures. To account for the two-dimensional (2D) effect of the 3D-RESURF action, 2D models of the electric field distribution are developed. Based on these, expressions are derived for the breakdown voltage as a function of doping concentration and physical dimensions. In addition to cases where the drift regions are fully depleted, the model developed is also applicable to situations involving drift regions which are almost depleted. Accuracy of the analytical approach is verified by comparison with numerical results obtained from the MEDICI device simulator.

Investigation of extinction in unsteady flames in turbulent combustion by 2D-LIF of OH radials and flamelet analysis

An experimental and theoretical investigation of premixed turbulent combustion in an engine simulator is presented. The distribution of hydroxyl radicals formed in the combustion of propane/air mixtures was visualized by 2D-LIF and used to monitor the progress of the combustion process. For stoichiometric mixtures, images showed a continuous wrinkled flame front, while in lean (λ=1.5) mixtures, local flame extinction was observed as discontinuities in the reaction zone. A bright active reaction zone was still observed in flame inlets and closed concave structures. The effects of self-absorption and of collisional quenching on the fluorescence signal are considered and appear to have only a minor net influence on the shape and width of the flame front. The images are evaluated and interpreted in terms of the Lewis number effect and the laminar flamelet model. Analysis was performed by determining the contour lines of the images (specifically, the ratios of average maximum to equilibrium OH concentration) and comparing with corresponding ratios from unstrained flame simulations. The results show that although the degree of turbulence is not high enough for straining effects to be important, flamelet curvature does play a significant role in the combustion of lean mixtures; this is manifested by a mean effective flame velocity that is less than the laminar burning velocity. © 1991 Combustion Institute.

Applying quality control in building energy modelling: Comparative simulation of a high performance building

Quality control is considered from the simulator's perspective through comparative simulation of an ultra energy-efficient building with EE4-DOE2.1E and EnergyPlus. The University of Calgary's Leadership in Energy and Environmental Design Platinum Child Development Centre, with a 66% certified energy cost reduction rating, was the case study building. A Natural Resources Canada incentive program required use of EE4 interface with DOE2.1E simulation engine for energy modelling. As DOE2.1E lacks specific features to simulate advanced systems such as radiant cooling in the CDC, an EnergyPlus model was developed to further evaluate these features. The EE4-DOE2.1E model was used for quality control during development of the base EnergyPlus model and simulation results were compared. Advanced energy systems then added to the EnergyPlus model generated small difference in estimated total annual energy use. The comparative simulation process helped identify the main input errors in the draft EnergyPlus model. The comparative use of less complex simulation programs is recommended for quality control when producing more complex models. © 2009 International Building Performance Simulation Association (IBPSA).

Monte Carlo optimization strategies for air-traffic control

The safety of the flights, and in particular conflict resolution for separation assurance, is one of the main tasks of Air Traffic Control. Conflict resolution requires decision making in the face of the considerable levels of uncertainty inherent in the motion of aircraft. We present a Monte Carlo framework for conflict resolution which allows one to take into account such levels of uncertainty through the use of a stochastic simulator. A simulation example inspired by current air traffic control practice illustrates the proposed conflict resolution strategy. Copyright © 2005 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.