Linking energy policy, electricity generation and transmission using strong sustainability and co-optimization

The design of a sustainable electricity generation and transmission system is based on the established science of anthropogenic climate change and the realization that depending on imported fossil-fuels is becoming a measure of energy insecurity of supply. A model is proposed which integrates generation fuel mix composition, assignment of plants and optimized power flow, using Portugal as a case study. The result of this co-optimized approach is an overall set of generator types/fuels which increases the diversity of Portuguese electricity supply, lowers its dependency on imported fuels by 14.62% and moves the country towards meeting its regional and international obligations of 31% energy from renewables by 2020 and a 27% reduction in greenhouse gas emissions by 2012, respectively. The quantity and composition of power generation at each bus is specified, with particular focus on quantifying the amount of distributed generation. Based on other works, the resultant, overall distributed capacity penetration of 19.02% of total installed generation is expected to yield positive network benefits. Thus, the model demonstrates that national energy policy and technical deployment can be linked through sustainability and, moreover, that the respective goals may be mutually achieved via holistic, integrated design. ©2009 IEEE.

On the domain decomposition and transmission line modelling finite element method for time-domain induction motor analysis

This paper demonstrates how a finite element model which exploits domain decomposition is applied to the analysis of three-phase induction motors. It is shown that a significant gain in cpu time results when compared with standard finite element analysis. Aspects of the application of the method which are particular to induction motors are considered: the means of improving the convergence of the nonlinear finite element equations; the choice of symmetrical sub-domains; the modelling of relative movement; and the inclusion of periodic boundary conditions. © 1999 IEEE.

Application of domain decomposition and transmission line modelling techniques to 2D, time-domain, finite element problems

In this paper a recently published finite element method, which combines domain decomposition with a novel technique for solving nonlinear magnetostatic finite element problems is described. It is then shown how the method can be extended to, and optimised for, the solution of time-domain problems. © 1999 IEEE.

Erratum: "Zinc oxide nanostructures and high electron mobility nanocomposite thin film transistors" (IEEE Transactions on Electron Devices (2009))

In the above entitled paper (ibid., vol. 55, no. 11, pp. 3001-3011), two errors were noticed after the paper went to press. The errors are corrected here.

Understanding the kink formation in GaAs/InAs heterostructural nanowires

The kinks formation in heterostructural nanowires was observed to be dominant when InAs nanowires were grown on GaAs nanowires. Nanowires were grown through vapor-liquid-solid (VLS) mechanism in an MOCVD (metalorganic chemical vapor deposition) reactor. GaAs nanowires were grown in [1 1 1 ]B direction on a GaAs (1 1 1 )B substrate. When InAs nanowires grown on the GaAs nanowires, most of the InAs nanowires changed their growth directions from [1 1 1 ]B to other 〈111〉B directions. The kinks formation is ascribed to the large compressive misfit strain at the GaAs/InAs interface (7.2% lattice mismatch between GaAs and InAs) and the high mobility of indium species during MOCVD growth. The in-depth analysis of the kinks formation was done by growing InAs for short times on the GaAs nanowires and characterizing the samples. The hindrance to compressively strain InAs to form coherent layers with GaAs pushed the InAs/Au interfaces to the sides of the GaAs nanowires growth ends. New InAs/Au interfaces have generated at the sides of GaAs nanowires, due to lateral growth of InAs on GaAs nanowires. These new interfaces led the InAs nanowires growth in other 〈111〉B directions. The morphological and structural features of these heterostructural kinked nanowires were characterized using scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques. © 2006 IEEE.

SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition.

Gas-phase silver nanoparticles were coated with silicon dioxide (SiO2) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 degrees C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10(7) particles cm(-3).

Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst

We report on the growth of single-walled carbon nanotubes from a monometallic Co catalyst on an oxidized Si wafer support by the most simple growth recipe (vacuum annealing, growth by undiluted C 2H 2). Nevertheless, multiwavelength Raman spectroscopy and transmission electron spectroscopy show a remarkable selectivity for chiral indices and thus, e.g., high abundance with a single chirality representing 58% of all semiconducting tubes. In situ x-ray photoelectron spectroscopy monitors the catalyst chemistry during carbon nanotube growth and shows interfacial Co-Si interactions that may help to stabilize the nanoparticle/nanotube diameter. We outline a two-mechanism model explaining the selective growth. © 2012 American Physical Society.

Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni(10 at.% Pt) film with Si(1 0 0) substrate

The reaction between an 11 nm Ni(10 at.% Pt) film on a Si substrate has been examined by in situ X-ray diffraction (XRD), atom probe tomography (APT) and transmission electron microscopy (TEM). In situ XRD experiments show the unusual formation of a phase without an XRD peak through consumption of the metal. According to APT, this phase has an Si concentration gradient in accordance with the θ-Ni2Si metastable phase. TEM analysis confirms the direct formation of θ-Ni2Si in epitaxy on Si(1 0 0) with two variants of the epitaxial relationship. © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.