A study of capacitance-voltage characteristics of lead zirconate titanate ferroelectric thin films and their usage to investigate polarization and coercive field.

Capacitance-voltage (C-V) characteristics of lead zirconate titanate (PZT) thin films with a thickness of 130 nm were measured between 300 and 533 K. The transition between ferroelectric and paraelectric phases was revealed to be of second order in our case, with a Curie temperature at around 450 K. A linear relationship was found between the measured capacitance and the inverse square root of the applied voltage. It was shown that such a relationship could be fitted well by a universal expression of C/A = k(V+V(0))(-1/2) and that this expression could be derived by expanding the Landau-Devonshire free energy at an effective equilibrium position of the Ti/Zr ion in a PZT unit cell. By using the derived equations in this work, the free energy parameters for an individual material can be obtained solely from the corresponding C-V data, and the temperature dependences of both remnant polarization and coercive voltage are shown to be in quantitative agreement with the experimental data.

Orthorhombic α-moo 3 coatings with lath-shaped morphology developed by SPPS: Applications to super-capacitors

Electrical double-layer capacitors owe their large capacitance to the formation of a double-layer at the electrode/electrolyte interface of high surface area carbon-based electrode materials. Greater electrical energy storage capacity has been attributed to transition metal oxides/nitrides that undergo fast, reversible redox reactions at the electrode surface (pseudo-capacitive behavior) in addition to forming electrical double-layers. Solution Precursor Plasma Spray (SPPS) has shown promise for depositing porous, high surface area transition metal oxides. This investigation explored the potential of SPPS to fabricate a-MoO 3 coatings with micro-structures suitable for use as super-capacitor electrodes. The effects of number of spray passes, spray distance, solution concentration, flow rate and spray velocity on the chemistry and micro-structure of the a-MoO 3 deposits were examined. DTA/TGA, SEM, XRD, and electrochemical analyses were performed to characterize the coatings. The results demonstrate the importance of post-deposition heating of the deposit by subsequent passes of the plasma on the coating morphology. © ASM International.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

Electrical/optical dual-function redox potential transistor

We demonstrate a new type of transistors, the electrical/optical "dual-function redox-potential transistors", which is solution processable and environmentally stable. This device consists of vertically staked electrodes that act as gate, emitter and collector. It can perform as a normal transistor, whilst one electrode which is sensitised by dye enables to generate photocurrent when illuminated. Solution processable oxide-nanoparticles were used to form various functional layers, which allow an electrolyte to penetrate through and, consequently, the current between emitter and collector can be controlled by the gate potential modulated distribution of ions. The result here shows that the device performs with high ON-current under low driving voltage (<1â€...V), while the transistor performance can readily be controlled by photo-illumination. Such device with combined optical and electrical functionalities allows single device to perform the tasks that are usually done by a circuit/system with multiple optical and electrical components, and it is promising for various applications.