Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

A quantum dot sensitized solar cell based on vertically aligned carbon nanotube templated ZnO arrays

We report on a quantum dot sensitized solar cell (QDSSC) based on ZnO nanorod coated vertically aligned carbon nanotubes (VACNTs). Electrochemical impedance spectroscopy shows that the electron lifetime for the device based on VACNT/ZnO/CdSe is longer than that for a device based on ZnO/CdSe, indicating that the charge recombination at the interface is reduced by the presence of the VACNTs. Due to the increased surface area and longer electron lifetime, a power conversion efficiency of 1.46% is achieved for the VACNT/ZnO/CdSe devices under an illumination of one Sun (AM 1.5G, 100 mW/cm2). © 2010 Elsevier B.V.

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.