Single sensor boost converter-based maximum power point tracking algorithms

Two new maximum power point tracking algorithms are presented: the input voltage sensor, and duty ratio maximum power point tracking algorithm (ViSD algorithm); and the output voltage sensor, and duty ratio maximum power point tracking algorithm (VoSD algorithm). The ViSD and VoSD algorithms have the features, characteristics and advantages of the incremental conductance algorithm (INC); but, unlike the incremental conductance algorithm which requires two sensors (the voltage sensor and current sensor), the two algorithms are more desirable because they require only one sensor: the voltage sensor. Moreover, the VoSD technique is less complex; hence, it requires less computational processing. Both the ViSD and the VoSD techniques operate by maximising power at the converter output, instead of the input. The ViSD algorithm uses a voltage sensor placed at the input of a boost converter, while the VoSD algorithm uses a voltage sensor placed at the output of a boost converter. © 2011 IEEE.

Minimize frequency fluctuations of isolated power system with wind farm by using superconducting magnetic energy storage

Wind power generation as one of the most popular renewable energy applications is absorbing more and more attention all over the world. However, output power fluctuations of wind farm due to random variations of wind speed can cause network frequency and voltage flicker in power systems. The power quality consequently declines, particularly in an isolated power system such as the power system in a remote community or a small island. This paper proposes an application of superconducting magnetic energy storage (SMES) to minimize output fluctuations of an isolated power system with wind farm. The isolated power system is fed by a diesel generator and a wind generator consisting of a wind turbine and squirrel cage induction machine. The control strategy is detailed and the proposed system is evaluated by simulation in Matlab/Simulink.

Transient electrothermal simulation of power semiconductor devices

In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.© 2010 IEEE.