The effect of dopants on the twist elastic constant and the rotational viscosity coefficient for nematics

The twist elastic constant, K2, and the rotational viscosity coefficient, γ1, are of importance when the response lime for the in-plane switching mode is studied. Since adding dopants is one technique to improve the response characteristics, the effect of dopants on these physical properties is significant. The effect on K2 and γ1 of adding alkyl(alkoxy) phenylcyclopentenones and alkyl(alkoxy) cyanobiphenyls to the base mixture ZLI-4792 together with their temperature dependence have been investigated using different temperature scales. The reduced temperature scale showed the effect of these dopants on K2 is small. On the other hand, the temperature dependence of γ1 depends on both the absolute temperature scale and the reduced temperature scale. Therefore, it is clear that the choice of temperature scale with which to compare γ1 for different systems raises fundamental questions which way not have a unique answer. 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Physical properties of some novel nematic bimesogens for the flexoelectric effect

In a chiral nematic liquid crystal, the flexoelectric effect consists of a fast and linear coupling with an applied electric field. One difficulty to overcome is the unwinding of the helix that occurs at higher fields due to dielectric coupling. The use of bimesogens, which possess very low molecular dielectric anisotropy can improve flexoelectric characteristics. New bimesogen compounds have recently been synthesised that exhibit switching angles of 45° for applied fields of about 9 V.μm-1. In this paper, results from dielectric, electro-optic and dynamic light scattering measurements are reported for the new bimesogenic mixture. The dielectric anisotropy Δε changes sign with temperature and its values range between -0.2 and 0.3 for the temperature range studied. For Δε weakly positive, no electric field Freedericksz transition could be induced but Williams domains are observed instead. The large decrease in the bend elastic constant to viscosity coefficient ratio is attributed to a large increase in the bend viscosity coefficient. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

Synthesis of positive-real functions with low-complexity series-parallel networks

The purpose of this paper is to continue to develop the recently introduced concept of a regular positive-real function and its application to the classification of low-complexity two-terminal networks. This paper studies five- and six-element series-parallel networks with three reactive elements and presents a complete characterisation and graphical representation of the realisability conditions for these networks. The results are motivated by an approach to passive mechanical control which makes use of the inerter device. ©2009 IEEE.

Measurement of coefficient of consolidation during reconsolidation of liquefied sand

Saturated sands particularly at low relative density commonly exhibit rises in excess pore pressure when subjected to earthquake loading. The excess pore pressure can approach a maximum value, limited by the initial vertical effective stress. After the completion of earthquake shaking, these excess pore pressures dissipate according to the consolidation equation, which can be solved to produce a Fourier series solution. It will be shown by manipulation of this Fourier series that excess pore pressure traces provide a method for back-calculation of coefficient of consolidation Cv. This method is validated against dissipation curves generated using known values of C v and seen to be more accurate in the middle of the layer. The method is then applied to data recorded in centrifuge tests to evaluate Cv throughout the reconsolidation process following liquefaction conditions. C v is seen to fit better as a function of excess pore pressure ratio than effective stress for the stress levels considered. For the soil investigated, Cv is about three times smaller at excess pore pressure ratio of 0.9 compared to excess pore pressure ratio of 0. Copyright © 1996-2011 ASTM.

Angular dependence of domain wall resistivity in artificial magnetic domain structures.

We exploit the ability to precisely control the magnetic domain structure of perpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domain wall arrays and study their transport properties. The scaling behavior of this model system confirms the intrinsic domain wall origin of the magnetoresistance, and systematic studies using domains patterned at various angles to the current flow are excellently described by an angular-dependent resistivity tensor containing perpendicular and parallel domain wall resistivities. We find that the latter are fully consistent with Levy-Zhang theory, which allows us to estimate the ratio of minority to majority spin carrier resistivities, rho downward arrow/rho upward arrow approximately 5.5, in good agreement with thin film band structure calculations.

Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.