π-Conjugated molecules with fused rings for organic field-effect transistors: design, synthesis and applications

π-Conjugated molecular materials with fused rings are the focus of considerable interest in the emerging area of organic electronics, since the combination of excellent charge carrier mobility and high stability may lead to their practical applications. This tutorial review discusses the synthesis, properties and applications of π-conjugated organic semiconducting materials, especially those with fused rings. The achievements to date, the remaining problems and challenges, and the key research that needs to be done in the near future are all discussed.

Manufacturing dish shaped rings on radial-axial ring rolling mills

Ring rolling is an established method to produce seamless rings of different cross-sectional geometries. For dish shaped rings, there are applications in different areas such as offshore, aeronautics or the energy sector. At the moment, dish shaped rings are produced by machining of rings with rectangular shaped cross section, by (open die) hollow forging on a conical mandrel or by using shaped ring rolling tools. These ways of manufacturing have the disadvantage of high material waste, additional costs for special tools, long process time and limited or inflexible geometries. Therefore, the manufacturing of dish shaped rings on conventional radial-axial ring rolling mills would expand the range of products for ring producers. The aim of this study is to investigate the feasibility of an alternative to the current manufacturing processes, without requiring additional tooling and material costs. Therefore, the intended formation of dish shaped rings-previously regarded as a form error-is investigated. Based on an analysis of geometrical requirements and metal flow mechanisms, a rolling strategy is presented, causing dishing and ring climbing by a large height reduction of the ring. Using this rolling strategy dish shaped rings with dishing angles up to 18° were achieved. In addition to the experiments finite element method (FEM)-simulations of the process have been successfully conducted, in order to analyze the local strain evolution. However, when the contact between ring and main roll is lost in the process the ring starts to oscillate around the mandrel and neither dishing nor ring climbing is observed. © 2013 German Academic Society for Production Engineering (WGP).

Designing folding rings using polynomial continuation

© 2014 by ASME. Two types of foldable rings are designed using polynomial continuation. The first type of ring, when deployed, forms regular polygons with an even number of sides and is designed by specifying a sequence of orientations which each bar must attain at various stages throughout deployment. A design criterion is that these foldable rings must fold with all bars parallel in the stowed position. At first, all three Euler angles are used to specify bar orientations, but elimination is also used to reduce the number of specified Euler angles to two, allowing greater freedom in the design process. The second type of ring, when deployed, forms doubly plane-symmetric (irregular) polygons. The doubly symmetric rings are designed using polynomial continuation, but in this example a series of bar end locations (in the stowed position) is used as the design criterion with focus restricted to those rings possessing eight bars.

Graphite intercalation compounds under pressure

Motivated by recent experimental work, we use first-principles density functional theory methods to conduct an extensive search for low enthalpy structures of C$_6$Ca under pressure. As well as a range of buckled structures, which are energetically competitive over an intermediate range of pressures, we show that the high pressure system ($\gtrsim 18$ GPa) is unstable towards the formation of a novel class of layered structures, with the most stable compound involving carbon sheets containing five- and eight-membered rings. As well as discussing the energetics of the different classes of low enthalpy structures, we comment on the electronic structure of the high pressure compound and its implications for superconductivity.

Evaluation of termination techniques for 4H-SiC PiN diodes and trench JFETs

An investigation concerning suitable termination techniques for 4H-SiC trench JFETs is presented. Field plates, p+ floating rings and junction termination extension techniques are used to terminate 1.2kV class PiN diodes. The fabricated PiN diodes evaluated here have a similar design to trench JFETs. Therefore, the conclusions for PiN diodes can be applied to JFET structures as well. Numerical simulations are also used to illustrate the effect of the terminations on the diodes' blocking mode behaviour.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Surface atomic properties of tetrahedral amorphous carbon

The surface energy and surface atomic structure of tetrahedral amorphous carbon has been calculated by an ab-initio method. The surface atoms are found to reconstruct into sp2 sites often bonded in graphitic rings. Placing the dangling bonds on adjacent surface atoms lower their energy by π-bonding and this is the source of the low surface energy. The even lower surface energy of hydrogenated amorphous carbon (a-C:H) is due to the hydrogenation of all broken surface bonds. © 2005 Elsevier B.V. All rights reserved.