Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

The most persistent soft-clique in a set of sampled graphs

When searching for characteristic subpatterns in potentially noisy graph data, it appears self-evident that having multiple observations would be better than having just one. However, it turns out that the inconsistencies introduced when different graph instances have different edge sets pose a serious challenge. In this work we address this challenge for the problem of finding maximum weighted cliques. We introduce the concept of most persistent soft-clique. This is subset of vertices, that 1) is almost fully or at least densely connected, 2) occurs in all or almost all graph instances, and 3) has the maximum weight. We present a measure of clique-ness, that essentially counts the number of edge missing to make a subset of vertices into a clique. With this measure, we show that the problem of finding the most persistent soft-clique problem can be cast either as: a) a max-min two person game optimization problem, or b) a min-min soft margin optimization problem. Both formulations lead to the same solution when using a partial Lagrangian method to solve the optimization problems. By experiments on synthetic data and on real social network data we show that the proposed method is able to reliably find soft cliques in graph data, even if that is distorted by random noise or unreliable observations. Copyright 2012 by the author(s)/owner(s).