Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Low power all-optical switch in a passive InGaAsP multiple quantum well waveguide

We demonstrate the use of resonant bandfilling nonlinearity in an InGaAsP/InGaAsP Multiple Quantum Well (MQW) waveguide due to photogenerated carriers to obtain switching at pulse powers, which can readily be obtained from an erbium amplified diode laser source. In order to produce gating a polarisation rotation gate was used, which relies on an asymmetry in the nonlinear refraction on the principle axes of the waveguide.

A 40 Gb/s optical bus for optical backplane interconnections

Optical technologies have received large interest in recent years for use in board-level interconnects. Polymer multimode waveguides in particular, constitute a promising technology for high-capacity optical backplanes as they can be cost-effectively integrated onto conventional printed circuit boards (PCBs). This paper presents the first optical backplane demonstrator based on the use of PCB-integrated polymer multimode waveguides and a regenerative shared bus architecture. The backplane demonstrator is formed with commercially-available low-cost electronic and photonic components onto conventional FR4 substrates and comprises two opto-electronic (OE) bus modules interconnected via a prototype regenerator unit. The system enables interconnection between the connected cards over four optical channels, each operating at 10 Gb/s. Bus extension is achieved by cascading OE bus modules via 3R regenerator units, overcoming therefore the inherent limitation of optical bus topologies in the maximum number of cards that can be connected to the bus. Details of the design, fabrication, and assembly of the different parts of this optical bus backplane are presented and related optical and data transmission characterisation studies are reported. The optical layer of the OE bus modules comprises a four-channel three-card waveguide layout that is compatible with VCSEL/PD arrays and ribbon fibres. All on-board optical paths exhibit insertion losses below 13 dB and intra-channel crosstalk lower than -29 dB. The robustness of the signal distribution from the bus inputs to all respective bus output ports in the presence of input misalignment is demonstrated, while 1 dB input alignment tolerances of approximately ±10 μm are obtained. The electrical layer of the OE bus modules comprises the essential driving circuitry for 1×4 VCSEL and PD arrays and the corresponding control and power regulation circuits. The interface between the optical and electrical layers of the bus modules is achieved with simple OE connectors that enable end-fired optical coupling into and out of the on-board polymer waveguides. The backplane demonstrator achieves error-free (BER < 10-12) 10 Gb/s data transmission over each optical channel, enabling therefore, an aggregate interconnection capacity of 40 Gb/s between any connected cards. © 1983-2012 IEEE.