Algorithm for identification in the v-gap metric

This paper suggests a method for identification in the v-gap metric. For a finite number of frequency response samples, a problem for identification in the v-gap metric is formulated and an approximate solution is described. It uses an iterative technique for obtaining an L2-gap approximation. Each stage of the iteration involves solving an LMI optimisation. Given a known stabilising controller and the L2-gap approximation, it is shown how to derive a v-gap approximation.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

Geometrical properties and turbulent flame speed measurements in stationary premixed V-flames using direct numerical simulation

Three dimensional, fully compressible direct numerical simulations (DNS) of premixed turbulent flames are carried out in a V-flame configuration. The governing equations and the numerical implementation are described in detail, including modifications made to the Navier-Stokes Characteristic Boundary Conditions (NSCBC) to accommodate the steep transverse velocity and composition gradients generated when the flame crosses the boundary. Three cases, at turbulence intensities, u′/sL, of 1, 2, and 6 are considered. The influence of the flame holder on downstream flame properties is assessed through the distributions of the surface-conditioned displacement speed, curvature and tangential strain rates, and compared to data from similarly processed planar flames. The distributions are found to be indistinguishable from planar flames for distances greater than about 17δth downstream of the flame holder, where δth is the laminar flame thermal thickness. Favre mean fields are constructed, and the growth of the mean flame brush is found to be well described by simple Taylor type diffusion. The turbulent flame speed, sT is evaluated from an expression describing the propagation speed of an isosurface of the mean reaction progress variable c̃ in terms of the imbalance between the mean reactive, diffusive, and turbulent fluxes within the flame brush. The results are compared to the consumption speed, sC, calculated from the integral of the mean reaction rate, and to the predictions of a recently developed flame speed model (Kolla et al., Combust Sci Technol 181(3):518-535, 2009). The model predictions are improved in all cases by including the effects of mean molecular diffusion, and the overall agreement is good for the higher turbulence intensity cases once the tangential convective flux of c̃ is taken into account. © 2010 Springer Science+Business Media B.V.