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An ingenious new CMOS-compatible process which promises to significantly improve the performance of power devices is discussed. A novel power device concept based on the use of high voltage regions suspended on thin semiconductor/dielectric membranes is reported. The membrane power devices are manufactured in a fully-CMOS compatible silicon-on-insulator (SOI) process followed by a bulk etching step and subsequent back-passivation. The concept is applicable to a class of high voltage devices such as LDMOSFETs, diodes, LIGBTs and superjunctions.

Discrete dislocation plasticity analysis of crack-tip fields in polycrystalline materials

Small scale yielding around a mode I crack is analysed using polycrystalline discrete dislocation plasticity. Plane strain analyses are carried out with the dislocations all of edge character and modelled as line singularities in a linear elastic material. The lattice resistance to dislocation motion, nucleation, interaction with obstacles and annihilation are incorporated through a set of constitutive rules. Grain boundaries are modelled as impenetrable to dislocations. The polycrystalline material is taken to consist of two types of square grains, one of which has a bcc-like orientation and the other an fcc-like orientation. For both orientations there are three active slip systems. Alternating rows, alternating columns and a checker-board-like arrangement of the grains is used to construct the polycrystalline materials. Consistent with the increasing yield strength of the polycrystalline material with decreasing grain size, the calculations predict a decrease in both the plastic zone size and the crack-tip opening displacement for a given applied mode I stress intensity factor. Furthermore, slip-band and kink-band formation is inhibited by all grain arrangements and, with decreasing grain size, the stress and strain distributions more closely resemble the HRR fields with the crack-tip opening approximately inversely proportional to the yield strength of the polycrystalline materials. The calculations predict a reduction in fracture toughness with decreasing grain size associated with the grain boundaries acting as effective barriers to dislocation motion.