Customizing the technology roadmapping technique for software companies

Software importance keeps growing fast and consistently for many organizations. The growth of software functionality in manufactured products and the emergence of digital media, convergent spaces including digital content, software, and multi-channels to the market, are recent examples of organizational changes where software assumed a central position for the corporate strategy. This paper analyzes the alignment between strategic objectives and software development processes at software companies and proposes a methodology to ensure that development processes are aligned with the corporate capabilities required to exploit future market opportunities. The methodology includes the categorization of different software companies according to their core capabilities and the customization of the technology roadmapping technique for software companies. The research process included the realization of case studies and a survey. (c) 2006 PICMET.

EEFIT mission to Haiti following the 12th January 2010 earthquake

The Mw= 7.2 Haiti earthquake of 12th January 2010 caused extensive damage to buildings and other infrastructure in the epicentral region in and around Port-au-Prince. The Earthquake Engineering Field Investigation Team (EEFIT), which is based in the United Kingdom, organised a field mission to Haiti with the authors as the team members. The paper presents the geotechnical findings of the team including those relating to soil liquefaction and lateral spreading and discusses the performance of buildings, including historic buildings, and bridges. Unprecedented use was made of damage assessments made from remote images (i. e. images taken from satellites and aircraft) when planning the post-earthquake relief effort in Haiti and a principal objective of the team was to evaluate the accuracy of such assessments. Accordingly, 142 buildings in Port-au-Prince were inspected in the field by the EEFIT team; damage assessments had previously been made using remote images for all these buildings. On the basis of this survey, the tendency of remote assessments to underestimate damage was confirmed; it was found that the underestimate applied to assessments based on oblique images using the relatively new technique of Pictometry, as well as those based on vertical images, although to a lesser degree. The paper also discusses the distribution of damage in Port-au-Prince, which was found to be strongly clustered in ways that appear not to have been completely explained. © 2012 Springer Science+Business Media B.V.

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

Defect-free GaAs/AlGaAs Core-shell nanowires on Si substrates

We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

The rocking response of large flexible structures to earthquakes

The rocking response of structures subjected to strong ground motions is a problem of 'several scales'. While small structures are sensitive to acceleration pulses acting successively, large structures are more significantly affected by coherent low frequency components of ground motion. As a result, the rocking response of large structures is more stable and orderly, allowing effective isolation from the ground without imminent danger of overturning. This paper aims to characterize and predict the maximum rocking response of large and flexible structures to earthquakes using an idealized structural model. To achieve this, the maximum rocking demand caused by different earthquake records was evaluated using several ground motion intensity measures. Pulse-type records which typically have high peak ground velocity and lower frequency content caused large rocking amplitudes, whereas non-pulse type records caused random rocking motion confined to small rocking amplitudes. Coherent velocity pulses were therefore identified as the primary cause of significant rocking motion. Using a suite of pulse-type ground motions, it was observed that idealized wavelets fitted to velocity pulses can adequately describe the rocking response of large structures. Further, a parametric analysis demonstrates that pulse shape parameters affect the maximum rocking response significantly. Based on these two findings, a probabilistic analysis method is proposed for estimating the maximum rocking demand to pulse-type earthquakes. The dimensionless demand maps, produced using these methods, have predictive power in the near-field provided that pulse period and amplitude can be estimated a priori. Use of this method within a probabilistic seismic demand analysis framework is briefly discussed. © 2013 Springer Science+Business Media Dordrecht.