32 resultados para Mann


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Transmission terahertz time-domain spectroscopy (THz-TDS) measurements of carbon nanotube arrays are presented. A relatively thin film with vertically aligned multi-walled carbon nanotubes has been prepared and measured using THz-TDS. Experimental results were obtained from 80GHz to 2.5THz, and the sample has been characterized by extracting the relative permittivity of the carbon nanotubes. A combination of the Maxwell-Garnett and Drude models within the frequency range provide a good fit to the measured permittivity.

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The aim of this paper is to describe the growth and optimization of carbon nanotube (CNT) and CNT/Zinc Oxide nanostructures to produce novel electron sources. The emitters studied in this project are based on regular array of vertically aligned 5 μm height and 50 nm diameter CNTs with a pitch of 10 μm as described previously (1). Such a cathode design allows us to minimize electric field shielding effects and thus to help in optimizing the emitted current density. We have previously obtained a current density of 1 A/cm 2 from such arrays in DC mode, and over 12 A/cm2 in pulsed mode at RF frequencies. © 2010 IEEE.

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Carbon nanotubes (CNTs) have been determined to be field emitters of high quality, but CNTs produced by chemical vapour deposition can produce emission currents with high instability and noise. This work finds that adsorbates and amorphous carbon deposited during the growth process are the primary contributors to field emission instability, and shows that burning off the amorphous carbon in air at 450 °C removes the amorphous carbon, resulting in stabilities of better than 3 per cent over 1 h. This work removes one of the major barriers to the use of CNTs in field emission devices.

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This paper provides an insight into the long-term trends of the four seasonal and annual precipitations in various climatological regions and sub-regions in India. The trends were useful to investigate whether Indian seasonal rainfall is changing in terms of magnitude or location-wise. Trends were assessed over the period of 1954-2003 using parametric ordinary least square fits and non-parametric Mann-Kendall technique. The trend significance was tested at the 95% confidence level. Apart from the trends for individual climatological regions in India and the average for the whole of India, trends were also specifically determined for the possible smaller geographical areas in order to understand how different the trends would be from the bigger spatial scales. The smaller geographical regions consist of the whole southwestern continental state of Kerala. It was shown that there are decreasing trends in the spring and monsoon rainfall and increasing trends in the autumn and winter rainfalls. These changes are not always homogeneous over various regions, even in the very short scales implying a careful regional analysis would be necessary for drawing conclusions regarding agro-ecological or other local projects requiring change in rainfall information. Furthermore, the differences between the trend magnitudes and directions from the two different methods are significantly small and fall well within the significance limit for all the cases investigated in Indian regions (except where noted). © 2010 Springer-Verlag.

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The aim of this paper is to describe the growth and optimization of ballasted carbon nanotube (CNT) and CNT/Zinc Oxide nanostructures to produce novel electron sources for use in lighting and x-ray applications. © 2010 ITE and SID.

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Terahertz time-domain spectroscopy measurements were made for vertically aligned multi-walled carbon nanotube (VACNT) films. We obtained the frequency dependent complex permittivity and conductivity (on the assumption that permeability μ = 1) of several samples exhibiting Drude behaviour for lossy metals. The obtained material properties of VACNT films provide information for potential microwave and terahertz applications. © 2011 Elsevier Ltd. All rights reserved.

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A vertically aligned multi-walled carbon nanotube (VACNT) film has been characterized by rectangular waveguide measurements. The complex scattering parameters (S-parameters) are measured by a vector network analyzer at X-band frequencies. The effective complex permittivity and permeability of the VACNT film have been extracted using the Nicolson-Ross-Weir (NWR) approach. The extracted parameters are verified by full wave simulations (CST Microwave Studio) and very good agreement has been obtained. A systematic error analysis is presented and the errors are within the acceptable range. The performance of VACNT films as an absorber is examined, and comparison with the conventional carbon loaded materials shows that a 90% size reduction is possible whilst maintaining the same absorption level. © 2011 EUROPEAN MICROWAVE ASSOC.

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Angular field emission (FE) properties of vertically aligned carbon nanotube arrays have been measured on samples grown by plasma enhanced chemical vapor deposition and characterized by scanning electron microscope and I-V measurements. These properties determine the angular divergence of electron beams, a crucial parameter in order to obtain high brilliance FE based cathodes. From angular distributions of the electron beam transmitted through extraction grids of different mesh size and by using ray-tracing simulations, the maximum emission angle from carbon nanotube tips has been determined to be about ± 30 around the tube main axis. © 2012 American Institute of Physics.

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We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.