Nonvolatile memory functionality of ZnO nanowire transistors controlled by mobile protons.

We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure hydrogen annealing (HPHA) at relatively low temperature (400 °C). These ZnO nanowire devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We show that the memory characteristics are attributed to the movement of protons between the Si/SiO(2) interface and the SiO(2)/ZnO nanowire interface by the applied gate electric field. The memory mechanism is explained in terms of the tuning of interface properties, such as effective electric field, surface charge density, and surface barrier potential due to the movement of protons in the SiO(2) layer, consistent with the UV photoresponse characteristics of nanowire memory devices. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials.

The mobile arm support project as a test-bed for design research at the Cambridge EDC

A host of methods and tools to support designing are being developed in Cambridge EDC. These range from tools for design management to those for the generation and selection of design ideas, layouts, materials and production processes. A project, to develop a device to improve arm mobility of muscular dystrophy sufferers, is undertaken as a test-bed to evaluate and improve these methods and tools as well as to observe and modify its design and management processes. This paper presents the difficulties and advantages of using design methods and tools within this rehabilitation design context, with special focus on the evolution of the designs, tools, and management processes.