Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.

Physical properties of some novel nematic bimesogens for the flexoelectric effect

In a chiral nematic liquid crystal, the flexoelectric effect consists of a fast and linear coupling with an applied electric field. One difficulty to overcome is the unwinding of the helix that occurs at higher fields due to dielectric coupling. The use of bimesogens, which possess very low molecular dielectric anisotropy can improve flexoelectric characteristics. New bimesogen compounds have recently been synthesised that exhibit switching angles of 45° for applied fields of about 9 V.μm-1. In this paper, results from dielectric, electro-optic and dynamic light scattering measurements are reported for the new bimesogenic mixture. The dielectric anisotropy Δε changes sign with temperature and its values range between -0.2 and 0.3 for the temperature range studied. For Δε weakly positive, no electric field Freedericksz transition could be induced but Williams domains are observed instead. The large decrease in the bend elastic constant to viscosity coefficient ratio is attributed to a large increase in the bend viscosity coefficient. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

Secondary flow near an undulatory surface induced by wall blocking effect

Prandtl's secondary mean motions of the second kind near an undulating surface were explained in terms of turbulent blocking effect and kinematic boundary conditions at the surface, and its order of magnitude was estimated. Isotropic turbulence is distorted by the undulating surface of wavelength λ and amplitude h with a low slope, so that h « λ. The prime mechanism for generating the mean flow is that the far-field Isotropic turbulence is distorted by the non-local blocking effect of the surface to become anisotropic axisymmetric turbulence near the surface with principal axis that is not aligned with the local curvature of the undulation. Then the local analysis can be applied and the mechanism is similar to the mean flow generation mechanism for homogeneous axisymmetric turbulence over a planer surface, i.e. gradients of the Reynolds stress caused by the turbulent blocking effect generate the mean motions. The results from this simple analysis are consistent with previous exact analysis in which the effects of curvature are strictly taken into account. The results also qualitatively agree with flow visualization over an undulating surface in a mixing-box.

Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

Effect of superstructure stiffness on liquefaction-induced failure Mechanisms

Soil liquefaction following strong earthquakes causes extensive damage to civil engineering structures. Foundations of buildings, bridges etc can suffer excessive rotation/settlement due to liquefaction. Many of the recent earthquakes bear testimony for such damage. In this article a hypothesis that "Superstructure stiffness can determine the type of liquefaction-induced failure mechanism suffered by the foundations" is proposed. As a rider to this hypothesis, it will be argued that liquefaction will cause failure of a foundation system in a mode of failure that offers least resistance. Evidence will be offered in terms of field observations during the 921 Ji-Ji earthquake in 1999 in Taiwan and Bhuj earthquake of 2001 in India. Dynamic centrifuge test data and finite element analyses results are presented to illustrate the traditional failure mechanisms. Copyright © 2010, IGI Global. Copying or distributing in print or electronic forms without written permission of IGI Global is prohibited.

The effect of floor heat source area on the induced airflow in a room

We examine the role of heat source geometry in determining rates of airflow and thermal stratification in natural displacement ventilation flows. We modify existing models to account for heat sources of finite (non-zero) area, such as formed by a sun patch warming the floor of a room. Our model allows for predictions of the steady stratification and ventilation flow rates that develop in a room due to a circular heat source at floor level. We compare our theoretical predictions with predictions for the limiting cases of a point source of heat (yielding a stratified interior), and a uniformly heated floor (yielding a mixed interior). Our theory shows a smooth transition between these two limits, which themselves result in extremes of ventilation, as the ratio of the heat source radius to the room height increases. Our model for the transition from displacement to mixing ventilation is compared to previous work and demonstrates that the transition can occur for smaller sources than previously thought, particularly for rooms with large floor area compared to ceiling height. © 2009 Elsevier Ltd.

Enhancement of room temperature sub-bandgap light emission from silicon photonic crystal nanocavity by Purcell effect

We report the enhancement of sub-bandgap photoluminescence from silicon via the Purcell effect. We couple the defect emission from silicon, which is believed to be due to hydrogen incorporation into the lattice, to a photonic crystal (PhC) nanocavity. We observe an up to 300-fold enhancement of the emission at room temperature at 1550 nm, as compared to an unpatterned sample, which is then comparable to the silicon band-edge emission. We discuss the possibility of enhancing this emission even further by introducing additional defects by ion implantation, or by treating the silicon PhC nanocavity with hydrogen plasma. © 2011 Elsevier B.V.