Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

Soft turn-on of NPT IGBT under Active Voltage Control

In this paper the soft turn-on of NPT IGBT under Active Voltage Control (AVC) is presented. The AVC technique is able to control the IGBT switching trajectory according to a pre-defined reference signal generated by a FPGA chip. By applying a special designed reference signal at turn-on, the IGBT turn-on current overshoot and diode recovery can be optimized. Experiments of soft turn-on with different reference signal are presented in this paper. This technique can be used to reduce the switching stress on the device and on other components of the circuit. © 2011 IEEE.

How to avoid the problems of target-setting

Purpose: Advocates and critics of target-setting in the workplace seem unable to reach beyond their own well-entrenched battle lines. While the advocates of goal-directed behaviour point to what they see as demonstrable advantages, the critics of target-setting highlight equally demonstrable disadvantages. Indeed, the academic literature on this topic is currently mired in controversy, with neither side seemingly capable of envisaging a better way forward. This paper seeks to break the current deadlock and move thinking forward in this important aspect of performance measurement and management by outlining a new, more fruitful approach, based on both theory and practical experience. Design/methodology/approach: The topic was approached in three phases: assembling and reading key academic and other literature on the subject of target-setting and goal-directed behaviour, with a view to understanding, in depth, the arguments advanced by the advocates and critics of target-setting; comparing these published arguments with one's own experiential findings, in order to bring the essence of disagreement into much sharper focus; and then bringing to bear the academic and practical experience to identify the essential elements of a new, more fruitful approach offering all the benefits of goal-directed behaviour with none of the typical disadvantages of target-setting. Findings: The research led to three key findings: the advocates of goal-directed behaviour and critics of target-setting each make valid points, as seen from their own current perspectives; the likelihood of these two communities, left to themselves, ever reaching a new synthesis, seems vanishingly small (with leading thinkers in the goal-directed behaviour community already acknowledging this); and, between the three authors, it was discovered that their unusual combination of academic study and practical experience enabled them to see things differently. Hence, they would like to share their new thinking more widely. Research limitations/implications: The authors fully accept that their paper is informed by extensive practical experience and, as yet, there have been no opportunities to test their findings, conclusions and recommendations through rigorous academic research. However, they hope that the paper will move thinking forward in this arena, thereby informing future academic research. Practical implications: The authors hope that the practical implications of the paper will be significant, as it outlines a novel way for organisations to capture the benefits of goal-directed behaviour with none of the disadvantages typically associated with target-setting. Social implications: Given that increased efficiency and effectiveness in the management of organisations would be good for society, the authors think the paper has interesting social implications. Originality/value: Leading thinkers in the field of goal-directed behaviour, such as Locke and Latham, and leading critics of target-setting, such as Ordóñez et al. continue to argue with one another - much like, at the turn of the nineteenth century, proponents of the "wave theory of light" and proponents of the "particle theory of light" were similarly at loggerheads. Just as this furious scientific debate was ultimately resolved by Taylor's experiment, showing that light could behave both as a particle and wave at the same time, the authors believe that the paper demonstrates that goal-directed behaviour and target-setting can successfully co-exist. © Emerald Group Publishing Limited.

Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.

Turn-off failure mechanism in large area IGCTs

The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.

Modeling turn-off voltage rise in SOI LIGBT

The behavior of the drain voltage rise of the Lateral IGBT during inductive turn-off is studied in detail. Numerical simulations show that, if compared with the well known vertical IGBT, the Lateral IGBT presents a differences in the on-state stored charge and in the growth of the depleted region that result in a different drain voltage rise. In this paper a complete model for the voltage rise is devised through an accurate calculation of the equivalent output capacitance. The model is in excellent agreement with two-dimensional simulations. Further, the paper shows that previously proposed models, which targeted the vertical IGBT, are not adequate for the description of the turn-off voltage rise in the Lateral IGBT. © Springer Science + Business Media LLC 2006.

Optimised IGBT turn-off under active voltage control in PEBB applications

Active Voltage Control (AVC) is an implementation of classic Proportional-Derivative (PD) control and multi-loop feedback control to force an IGBT to follow a pre-set switching trajectory. Previously, AVC was mainly used for controlling series-connected IGBTs in order to enable voltage balance between IGBTs. In this paper, the nonlinear IGBT turn-off transient is further discussed and the turnoff of a single IGBT under AVC is further optimised in order to meet the demand of Power Electronic Building Block (PEBB) applications. © 2013 IEEE.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.