Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Synthesis and properties of a new series of low-molar-mass organo-siloxane derivatives

Two series of ferroelectric liquid crystalline organo-siloxanes containing a laterally attached halogen on the phenyl ring have been synthesised and characterised to determine the impact of the siloxane group and the halogen on the mesomorphism and electro-optic switching properties. Both monomesogenic and bimesogenic compounds have been studied. The monomesogenic derivatives were found to be ferroelectric with high tilt and Ps. The tilt angle of 45° and the Ps of 95nC/cm2 are almost temperature independent. The bimesogenic bromo substituted derivatives showed mainly ferroelectric phases about 60°C wide. Maximum values for the spontaneous polarisation and the tilt angle were only slightly influenced by the length of the siloxane spacer. Altering the halogen to a fluorine shifted the liquid cystalline phase slightly to higher temperatures whilst maintaining the mesophase range of 60°C.

Uncooled, 10Gb/s operation of two-contact InGaAsP lasers with low drive current

Uncooled, high-speed modulation of two-contact lasers is presented with ultra-low drive currents. Practical operation at 10Gb/s up to temperatures of 85°C and extinction ratios of 6dB are found for current swings which are less than 40% of conventional lasers.

Degradation evaluation of microelectromechanical thermal actuators

Metal based thermal microactuators normally have lower operation temperatures than those of Si-based ones; hence they have great potential for applications. However, metal-based thermal actuators easily suffer from degradation such as plastic deformation. In this study, planar thermal actuators were made by a single mask process using electroplated nickel as the active material, and their thermal degradation has been studied. Electrical tests show that the Ni-based thermal actuators deliver a maximum displacement of ∼20μm at an average temperature of ∼420°C, much lower than that of Si-based microactuators. However, the displacement strongly depends on the frequency and peak voltage of the pulse applied. Back bending was clearly observed at a maximum temperature as low as 240°C. Both forward and backward displacements increase with increasing the temperature up to ∼450°C, and then decreases with power. Scanning electron microscopy observation clearly showed that Ni structure deforms and reflows at power above 50mW. The compressive stress is believed to be responsible for Ni piling-up (creep), while the tensile stress upon removing the pulse current is responsible for necking at the hottest section of the device. Energy dispersive X-ray diffraction analysis revealed severe oxidation of the Ni-structure induced by Joule-heating of the current.

Thermal material with low curie temperature in a thermally actuated superconducting flux pump system

A thermally actuated flux pump is an efficient method to magnetize the high-temperature superconductor (HTS) bulk without applying a strong magnetic field. A thermal material is employed as a magnetic switch, which decides the efficiency of the system. To measure the Curie temperatures of those samples without destroying them, the nondestructive Curie temperature (NDT) measurement was developed. The Curie temperature of gadolinium (Gd) was measured by the NDT method and compared to the results from superconducting quantum interference device (SQUID). Because the SQUID tests require the sample to be cut into small piece, a constant shape of the testing sample could not be guaranteed. The demagnetizing effect was considered to remove the shape effect. The intrinsic permeability was modified from the apparent susceptibility by considering demagnetization. A thermal material with low Curie temperature, Mg 0.15Cu0.15Zn0.7Ti0.04Fe 1.96O4, was synthesized and its performance was tested and compared with previous thermal materials. Comparisons of three thermal materials, including the Curie temperature and the permeability, will be detailed in the paper. © 2002-2011 IEEE.

Localized tail state distribution in amorphous oxide transistors deduced from low temperature measurements

In this paper, we extract density of localized tail states from measurements of low temperature conductance in amorphous oxide transistors. At low temperatures, trap-limited conduction prevails, allowing extraction of the trapped carrier distribution with energy. Using a test device with a-InGaZnO channel layer, the extracted tail state energy and density at the conduction band minima are 20 meV and 2 × 10 19 cm -3 eV -1, respectively, which are consistent with values reported in the literature. Also, the field-effect mobility as a function of temperature from 77 K to 300 K is retrieved for different gate voltages, yielding the activation energy and the percolation threshold. © 2012 American Institute of Physics.

Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports

We grow ultra-high mass density carbon nanotube forests at 450°C on Ti-coated Cu supports using Co-Mo co-catalyst. X-ray photoelectron spectroscopy shows Mo strongly interacts with Ti and Co, suppressing both aggregation and lifting off of Co particles and, thus, promoting the root growth mechanism. The forests average a height of 0.38 μm and a mass density of 1.6 g cm -3. This mass density is the highest reported so far, even at higher temperatures or on insulators. The forests and Cu supports show ohmic conductivity (lowest resistance ∼22 kΩ), suggesting Co-Mo is useful for applications requiring forest growth on conductors. © 2013 AIP Publishing LLC.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

Experimental study of the effects of temperature variation on droplet size and wetness fraction in a low-pressure model steam turbine

The three-stage low-pressure model steam turbine at the Institute of Thermal Turbomachinery and Machinery Laboratory (ITSM) was used to study the impact of three different steam inlet temperatures on the homogeneous condensation process and the resulting wetness topology. The droplet spectrum as well as the particle number concentration were measured in front of the last stage using an optical-pneumatic probe. At design load, condensation starts inside the stator of the second stage. A change in the steam inlet temperature is able to shift the location of condensation onset within the blade row up- or downstream and even into adjoining blade passages, which leads to significantly different local droplet sizes and wetness fractions due to different local expansion rates. The measured results are compared to steady three-dimensional computational fluid dynamics calculations. The predicted nucleation zones could be largely confirmed by the measurements. Although the trend of measured and calculated droplet size across the span is satisfactory, there are considerable differences between the measured and computed droplet spectrum and wetness fractions. © IMechE 2013 Reprints and permissions: sagepub.co.uk/ journalsPermissions.nav.

Large-payload climbing in complex vertical environments using thermoplastic adhesive bonds

Despite many approaches proposed in the past, robotic climbing in a complex vertical environment is still a big challenge. We present here an alternative climbing technology that is based on thermoplastic adhesive (TPA) bonds. The approach has a great advantage because of its large payload capacity and viability to a wide range of flat surfaces and complex vertical terrains. The large payload capacity comes from a physical process of thermal bonding, while the wide applicability benefits from rheological properties of TPAs at higher temperatures and intermolecular forces between TPAs and adherends when being cooled down. A particular type of TPA has been used in combination with two robotic platforms, featuring different foot designs, including heating/cooling methods and construction of footpads. Various experiments have been conducted to quantitatively assess different aspects of the approach. Results show that an exceptionally high ratio of 500% between dynamic payloads and body mass can be achieved for stable and repeatable vertical climbing on flat surfaces at a low speed. Assessments on four types of typical complex vertical terrains with a measure, i.e., terrain shape index ranging from -0.114 to 0.167, return a universal success rate of 80%-100%. © 2004-2012 IEEE.