On the effects of turbulence modelling in design optimisation for high-lift devices

Aerodynamic shape optimisation is being increasingly utilised as a design tool in the aerospace industry. In order to provide accurate results, design optimisation methods rely on the accuracy of the underlying CFD methods applied to obtain aerodynamic forces for a given configuration. Previous studies of the authors have highlighted that the variation of the order of accuracy of the CFD solver with a fixed turbulence model affects the resulting optimised airfoil shape for a single element airfoil. The accuracy of the underlying CFD model is even more relevant in the context of high-lift configurations where an accurate prediction of flow is challenging due to the complex flow physics involving transition and flow separation phenomena. This paper explores the effect of the fidelity of CFD results for a range of turbulence models within the context of the computational design of aircraft configurations. The NLR7301 multi-element airfoil (main wing and flap) is selected as the baseline configuration, because of the wealth of experimental an computational results available for this configuration. An initial validation study is conducted in order to establish optimal mesh parameters. A bi-objective shape optimisation problem is then formulated, by trying to reveal the trade-off between lift and drag coefficients at high angles of attack. Optimisation of the airfoil shape is performed with Spalart-Allmaras, k - ω SST and k - ε realisable models. The results indicate that there is consistent and complementary impact to the optimum level achieved from all the three different turbulence models considered in the presented case study. Without identifying particular superiority of any of the turbu- lence models, we can say though that each of them expressed favourable influence towards different optimality routes. These observations lead to the exploration of new avenues for future research. © 2012 by the authors.

Switching performance of epitaxially grown normally-off 4H-SiC JFET

Static and dynamic behavior of the epitaxially grown dual gate trench 4H-SiC junction field effect transistor (JFET) is investigated. Typical on-state resistance Ron was 6-10mΩcm2 at VGS = 2.5V and the breakdown voltage between the range of 1.5-1.8kV was realized at VGS = -5V for normally-off like JFETs. It was found that the turn-on energy delivers the biggest part of the switching losses. The dependence of switching losses from gate resistor is nearly linear, suggesting that changing the gate resistor, a way similar to Si-IGBT technology, can easily control di/dt and dv/dt. Turn-on losses at 200°C are lower compared to those at 25°C, which indicates the influence of the high internal p-type gate layer resistance. Inductive switching numerical analysis suggested the strong influence of channel doping conditions on the turn-on switching performance. The fast switching normally-off JFET devices require heavily doped narrow JFET channel design. © (2009) Trans Tech Publications, Switzerland.