Community-led resettlement: From a flood-affected slum to a new society in Pune, India

This paper describes the resettlement process of a community devastated by annual floods, to newly constructed housing in Pune, India. The relocation from Kamgar Putala slum to a housing society at Hadapsar was organized by a community-led NGO partnership in 2004. The housing development was coordinated by the local NGO Shelter Associates with significant community participation. The housing has been revisited in 2010 to evaluate the sustainability of the resettlement project's delivery model via stakeholder perception. The process of organizing for resettlement after natural disaster is described along with the implementation and evaluation of the new housing nearly six years after initial occupation. The strong partnership approach overcame a series of political and financial hurdles at various stages of the relocation project. The story of resettling Kamgar Putala is detailed alongside an outline of the current political climate for an alternative slum-upgrading policy in India and Pune. The advantages of an empowered community supported by an influential local NGO demonstrate a commendable team effort which has tackled the threat of floods. The paper highlights the merits of a community-led partnership approach to housing development for achieving sustainable urban development as well as the alleviation of poverty in a developing context. © 2011 Taylor & Francis.

3 Gbit/s LED-based step index plastic optical fiber link using multilevel pulse amplitude modulation

Multilevel PAM is investigated for a LED-based SI-POF link. Using PAM-8, transmission at a record 3 Gbit/s is demonstrated for a maximum length of 25 m step index POF with offline post-receiver processing. © 2013 OSA.

Observing graphene grow: catalyst-graphene interactions during scalable graphene growth on polycrystalline copper.

Complementary in situ X-ray photoelectron spectroscopy (XPS), X-ray diffractometry, and environmental scanning electron microscopy are used to fingerprint the entire graphene chemical vapor deposition process on technologically important polycrystalline Cu catalysts to address the current lack of understanding of the underlying fundamental growth mechanisms and catalyst interactions. Graphene forms directly on metallic Cu during the high-temperature hydrocarbon exposure, whereby an upshift in the binding energies of the corresponding C1s XPS core level signatures is indicative of coupling between the Cu catalyst and the growing graphene. Minor carbon uptake into Cu can under certain conditions manifest itself as carbon precipitation upon cooling. Postgrowth, ambient air exposure even at room temperature decouples the graphene from Cu by (reversible) oxygen intercalation. The importance of these dynamic interactions is discussed for graphene growth, processing, and device integration.

Prospects of III-nitride optoelectronics grown on Si.

The use of III-nitride-based light-emitting diodes (LEDs) is now widespread in applications such as indicator lamps, display panels, backlighting for liquid-crystal display TVs and computer screens, traffic lights, etc. To meet the huge market demand and lower the manufacturing cost, the LED industry is moving fast from 2 inch to 4 inch and recently to 6 inch wafer sizes. Although Al2O3 (sapphire) and SiC remain the dominant substrate materials for the epitaxy of nitride LEDs, the use of large Si substrates attracts great interest because Si wafers are readily available in large diameters at low cost. In addition, such wafers are compatible with existing processing lines for 6 inch and larger wafers commonly used in the electronics industry. During the last decade, much exciting progress has been achieved in improving the performance of GaN-on-Si devices. In this contribution, the status and prospects of III-nitride optoelectronics grown on Si substrates are reviewed. The issues involved in the growth of GaN-based LED structures on Si and possible solutions are outlined, together with a brief introduction to some novel in situ and ex situ monitoring/characterization tools, which are especially useful for the growth of GaN-on-Si structures.

Low-cost high-efficiency GaN LED on large-area si substrate

The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

3 Gbit/s LED-based step index plastic optical fiber link using multilevel pulse amplitude modulation

Multilevel PAM is investigated for a LED-based SI-POF link. Using PAM-8, transmission at a record 3 Gbit/s is demonstrated for a maximum length of 25 m step index POF with offline post-receiver processing. © 2013 OSA.

Switch mode constant current LED Driver with high efficiency, high precision and wide dimming ratio

A high efficiency hard switching constant current LED driver is presented with high overall efficiency, high current precision, high LED efficacy, flicker-free and wide constant current dimming ratio. The high stable lighting source provides the best solution for office light, reading light and LCD backlight. © 2013 IEEE.