Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate

The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28-0.4 and not close to 1 because S is controlled by Ti-O-type bonds not Sr-O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si. © 1999 American Institute of Physics.

Schottky barrier heights of tantalum oxide, barium strontium titanate, lead zirconate titanate and strontium bismuth tantalate

Schottky barrier heights of various metals on tantalum pentoxide, barium strontium titanate, lead zirconate-titanate and strontium bismuth tantalate have been calculated as a function of metal work function. These oxides have a dimensionless Schottky barrier pinning factor, S, of 0.28 - 0.4 and not close to 1, because S is controlled by the Ti-O type bonds not Sr-O type bonds, as assumed previously. Band offsets on silicon are asymmetric with much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate (BST) are relatively poor barriers to electrons on Si.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Symmetrical 2-D Hermite-Gaussian square launch for high bit rate transmission in multimode fiber links

A 2-D Hermite-Gaussian square launch is demonstrated to show improved systems capacity over multimode fiber links. It shows a bandwidth improvement over both center and offset launches and exhibits ±5 μm misalignment tolerance. © 2011 Optical Society of America.

Tetrahedral amorphous carbon-silicon heterojunction band energy offsets

Non-hydrogenated tetrahedral amorphous carbon (ta-C) has shown superior field emission characteristics. The understanding of the emission mechanism has been hindered by the lack of any directly measured data on the band offsets between ta-C and Si. In this paper results from direct in situ X-ray photoemission spectroscopy (XPS) measurements of the band-offset between ta-C and Si are reported. The measurements were carried out using a filtered cathodic vacuum arc (FCVA) deposition system attached directly to an ultra-high vacuum (UHV) XPS chamber via a load lock chamber. Repeated XPS measurements were carried out after monolayer depositions on in situ cleaned Si substrates. The total film thickness for each set of measurements was approximately 5 nm. Analysis of the data from undoped ta-C on n and p Si show the unexpected result that the conduction band barrier between Si and ta-C remains around 1.0 eV, but that the valence band barrier changes from 0.7 to 0.0 eV. The band line up derived from these barriers suggests that the Fermi level in the ta-C lies 0.3 eV above the valence band on both p and n+Si. The heterojunction barriers when ta-C is doped with nitrogen are also presented. The implications of the heterojunction energy barrier heights for field emission from ta-C are discussed.

High-current adaptive impedance matching in narrowband power-line communication systems

This paper proposes a high current impedance matching method for narrowband power-line communication (NPLC) systems. The impedance of the power-line channel is time and location variant; therefore, coupling circuitry and the channel are not usually matched. This not only results in poor signal integrity at the receiving end, but also leads to a higher transmission power requirement to secure the communication process. To offset this negative effect, a high-current adaptive impedance circuit to enable impedance matching in power-line networks is reported. The approach taken is to match the channel impedance of N-PLC systems is based on the General Impedance Converter (GIC). In order to achieve high current a special coupler in which the inductive impedance can be altered by adjusting a microcontroller controlled digital resistor is demonstrated. It is shown that the coupler works well with heavy load current in power line networks. It works in both low and high transmitting current modes, a current as high as 760 mA has been obtained. Besides, compared with other adaptive impedance couplers, the advantages include higher matching resolution and a simple control interface. Experimental results are presented to demonstrate the operation of the coupler. © 2011 IEEE.

Mode-controlled vertical cavity surface emitting lasers for bandwidth enhancement of multimode fibre links

A GaAs Vertical Cavity Surface Emitting Laser (VCSEL) that generates controlled modes offset from the center is described. The device is modulated with a 27-1 pseudo-random bit sequence and its output is transmitted along a 1 km length of multimode fiber (MMF). Open eyes are obtained for data rates as high as 1.4Gb/s. The transmission bandwidth increases by a factor of 4 over over-filled launch (OFL). This enhancement is stable against environment influences on the fiber.

High bandwidth optical links over multimode fibre

A Fabry-Perot laser source operating at 1300 nm was modulated at 2.5 Gb/s with a 27-1 pseudo-random bit sequence. Three techniques were examined for increasing the bandwidth of optical links using multimode fiber (MMF). With an offset launch of 14 μm, the eye remained open after the 2 km link of 50 μm core MMF containing seven connectors and three splices. An approximate four-fold bandwidth improvement was obtained using the offset launch with a bandwidth-length product of 7.5 Gb/s.km and a bit error rate below 10-10. The bandwidth enhancement was stable against environmental influences on the fiber link, such as mechanical agitation. Detailed simulations demonstrated that the technique allows enhanced operating bandwidths in over 99% of existing link.

Blind frequency synchronisation for OFDM systems with pulse shaping

In multi-carrier systems, small carrier frequency offsets result in significant degradation of performance and this offset should be compensated before demodulation can be performed. In this paper, we consider a generic multi-carrier system with pulse shaping and estimate the frequency offset by exploiting the cyclostationarity of the received signal. By transforming the time domain signal to the cyclic correlation domain we are able to estimate the frequency offset without the aid of pilot symbols or the cyclic prefix. The Bayesian framework is used to obtain the estimate and we show how we can simplify the estimation process. © 1999 IEEE.

Modelling of long-term ground response to tunnelling under St James's Park, London

Following a tunnel excavation in low-permeability soil, it is commonly observed that the ground surface continues to settle and ground loading on the tunnel lining changes, as the pore pressures in the ground approach a new equilibrium condition. The monitored ground response following the tunnelling under St James's Park, London, shows that the mechanism of subsurface deformation is composed of three different zones: swelling, consolidation and rigid body movement. The swelling took place in a confined zone above the tunnel crown, extending vertically to approximately 5 m above it. On the sides of the tunnel, the consolidation of the soil occurred in the zone primarily within the tunnel horizon, from the shoulder to just beneath the invert, and extending laterally to a large offset from the tunnel centreline. Above these swelling and consolidation zones the soil moved downward as a rigid body. In this study, soil-fluid coupled three-dimensional finite element analyses were performed to simulate the mechanism of long-term ground response monitored at St James's Park. An advanced critical state soil model, which can simulate the behaviour of London Clay in both drained and undrained conditions, was adopted for the analyses. The analysis results are discussed and compared with the field monitoring data. It is found that the observed mechanism of long-term subsurface ground and tunnel lining response at St James's Park can be simulated accurately only when stiffness anisotropy, the variation of permeability between different units within the London Clay and non-uniform drainage conditions for the tunnel lining are considered. This has important implications for future prediction of the long-term behaviour of tunnels in clays.

Significant improvements in optical power budgets of real-time optical OFDM PON systems.

Based on a comprehensive theoretical optical orthogonal frequency division multiplexing (OOFDM) system model rigorously verified by comparing numerical results with end-to-end real-time experimental measurements at 11.25Gb/s, detailed explorations are undertaken, for the first time, of the impacts of various physical factors on the OOFDM system performance over directly modulated DFB laser (DML)-based, intensity modulation and direct detection (IMDD), single-mode fibre (SMF) systems without in-line optical amplification and chromatic dispersion compensation. It is shown that the low extinction ratio (ER) of the DML modulated OOFDM signal is the predominant factor limiting the maximum achievable optical power budget, and the subcarrier intermixing effect associated with square-law photon detection in the receiver reduces the optical power budget by at least 1dB. Results also indicate that, immediately after the DML in the transmitter, the insertion of a 0.02nm bandwidth optical Gaussian bandpass filter with a 0.01nm wavelength offset with respect to the optical carrier wavelength can enhance the OOFDM signal ER by approximately 1.24dB, thus resulting in a 7dB optical power budget improvement at a total channel BER of 1 × 10(-3).

7dB optical power budget improvements of 11.25Gb/s optical OFDM PON systems using optical filters

Wavelength offset super Gaussian optical filters enable 7dB increases in optical power budget of 11.25Gb/s optical OFDM PON systems using directly modulated DFBs, considerably relax filter bandwidth requirement and improve performance robustness to bandwidth variation. © 2011 Optical Society of America.

The effect of clearance on shrouded and unshrouded turbines at two levels of reaction

In this paper, the effect of seal clearance on the efficiency of a turbine with a shrouded rotor is compared with the effect of the tip clearance when the same turbine has an unshrouded rotor. The shrouded versus unshrouded comparison was undertaken for two turbine stage designs one having 50% reaction the other having 24% reaction. Measurements for a range of clearances, including very small clearances, showed three important phenomena. Firstly, as the clearance is reduced, there is a "break-even clearance" at which both the shrouded turbine and the unshrouded turbine have the same efficiency. If the clearance is reduced further, the unshrouded turbine performs better than the shrouded turbine, with the difference at zero clearance termed the "offset loss". This is contrary to the traditional assumption that both shrouded and unshrouded turbines have the same efficiency at zero clearance. The physics of the break-even clearance and the offset loss are discussed. Secondly, the use of a lower reaction had the effect of reducing the tip leakage efficiency penalty for both the shrouded and the unshrouded turbines. In order to understand the effect of reaction on the tip leakage, an analytical model was used and it was found that the tip leakage efficiency penalty should be understood as the dissipated kinetic energy rather than either the tip leakage mass flow rate or the tip leakage loss coefficient. Thirdly, it was also observed that, at a fixed flow coefficient, the fractional change in the output power with clearance was approximately twice the fractional change in efficiency with clearance. This was explained by using an analytical model. © 2010 by ASME.

SoC energy savings = reduce+reuse+recycle: A case study using a 660MHz DC-DC converter with integrated output filter

This paper advocates 'reduce, reuse, recycle' as a complete energy savings strategy. While reduction has been common to date, there is growing need to emphasize reuse and recycling as well. We design a DC-DC buck converter to demonstrate the 3 techniques: reduce with low-swing and zero voltage switching (ZVS), reuse with supply stacking, and recycle with regulated delivery of excess energy to the output load. The efficiency gained from these 3 techniques helps offset the loss of operating drivers at very high switching frequencies which are needed to move the output filter completely on-chip. A prototype was fabricated in 0.18μm CMOS, operates at 660MHz, and converts 2.2V to 0.75-1.0V at ∼50mA.1 © 2008 IEEE.

Channel selective tunnelling through a nanographene assembly.

We report selective tunnelling through a nanographene intermolecular tunnel junction achieved via scanning tunnelling microscope tip functionalization with hexa-peri-hexabenzocoronene (HBC) molecules. This leads to an offset in the alignment between the energy levels of the tip and the molecular assembly, resulting in the imaging of a variety of distinct charge density patterns in the HBC assembly, not attainable using a bare metallic tip. Different tunnelling channels can be selected by the application of an electric field in the tunnelling junction, which changes the condition of the HBC on the tip. Density functional theory-based calculations relate the imaged HBC patterns to the calculated molecular orbitals at certain energy levels. These patterns bear a close resemblance to the π-orbital states of the HBC molecule calculated at the relevant energy levels, mainly below the Fermi energy of HBC. This correlation demonstrates the ability of an HBC functionalized tip as regards accessing an energy range that is restricted to the usual operating bias range around the Fermi energy with a normal metallic tip at room temperature. Apart from relating to molecular orbitals, some patterns could also be described in association with the Clar aromatic sextet formula. Our observations may help pave the way towards the possibility of controlling charge transport between organic interfaces.