A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

A quantum dot sensitized solar cell based on vertically aligned carbon nanotube templated ZnO arrays

We report on a quantum dot sensitized solar cell (QDSSC) based on ZnO nanorod coated vertically aligned carbon nanotubes (VACNTs). Electrochemical impedance spectroscopy shows that the electron lifetime for the device based on VACNT/ZnO/CdSe is longer than that for a device based on ZnO/CdSe, indicating that the charge recombination at the interface is reduced by the presence of the VACNTs. Due to the increased surface area and longer electron lifetime, a power conversion efficiency of 1.46% is achieved for the VACNT/ZnO/CdSe devices under an illumination of one Sun (AM 1.5G, 100 mW/cm2). © 2010 Elsevier B.V.

Formation of nanoparticles from ultrafast laser condensates of metal targets

Optimised ultrafast laser ablation can result in almost complete ionisation of the target material and the formation of a high velocity plasma jet. Collisions with the ambient gas behind the shock front cools the material resulting in the formation of mainly spherical, single crystal nanoscale particles in the condensate. This work characterises the nanoscale structures produced by the ultrafast laser interactions in He atmospheres at STP with Ni and Al. High resolution transmission electron microscopy was employed to study the microstructure of the condensates and to classify the production of particles forms as a function of the illumination conditions.

Image-based localization and pose recovery using scale invariant features

In this paper, we propose a vision based mobile robot localization strategy. Local scale-invariant features are used as natural landmarks in unstructured and unmodified environment. The local characteristics of the features we use prove to be robust to occlusion and outliers. In addition, the invariance of the features to viewpoint change makes them suitable landmarks for mobile robot localization. Scale-invariant features detected in the first exploration are indexed into a location database. Indexing and voting allow efficient recognition of global localization. The localization result is verified by epipolar geometry between the representative view in database and the view to be localized, thus the probability of false localization will be decreased. The localization system can recover the pose of the camera mounted on the robot by essential matrix decomposition. Then the position of the robot can be computed easily. Both calibrated and un-calibrated cases are discussed and relative position estimation based on calibrated camera turns out to be the better choice. Experimental results show that our approach is effective and reliable in the case of illumination changes, similarity transformations and extraneous features. © 2004 IEEE.

Reducing energy demand: what are the practical limits?

Concern over the global energy system, whether driven by climate change, national security, or fears of shortage, is being discussed widely and in every arena but with a bias toward energy supply options. While demand reduction is often mentioned in passing, it is rarely a priority for implementation, whether through policy or through the search for innovation. This paper aims to draw attention to the opportunity for major reduction in energy demand, by presenting an analysis of how much of current global energy demand could be avoided. Previous work led to a "map" of global energy use that traces the flow of energy from primary sources (fuels or renewable sources), through fuel refinery, electricity generation, and end-use conversion devices, to passive systems and the delivery of final energy services (transport, illumination, and sustenance). The key passive systems are presented here and analyzed through simple engineering models with scalar equations using data based on current global practice. Physically credible options for change to key design parameters are identified and used to predict the energy savings possible for each system. The result demonstrates that 73% of global energy use could be saved by practically achievable design changes to passive systems. This reduction could be increased by further efficiency improvements in conversion devices. A list of the solutions required to achieve these savings is provided.

Photoisomerising effects in nitroazo flexoelectric dimeric nematic systems

The photoisomerisation of a flexoelectric chiral nematic bimesogen system dyed with an azo dye has been investigated. The host material has a pitch and field dependent tilt angle that are temperature independent. Upon illumination by ultra violet, the azo dye molecules undergo a shape change from their trans to cis isomer. The effect of the shape change of the dye on the mixture is to decrease the I-N* transition temperatures, to increase the response times and to decrease the transmitted optical intensity. For the same reduced temperatures, the tilt angles, pitch and threshold voltages for the transition from focal conic to homeotropic textures are unchanged. The macroscopic parameters observed suggest that the orientational order parameter of the system is reduced by UV illumination. The cis isomers do not appear to separate from the host material or significantly change the flexoelectric coefficient. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

Face recognition from video

In spite of over two decades of intense research, illumination and pose invariance remain prohibitively challenging aspects of face recognition for most practical applications. The objective of this work is to recognize faces using video sequences both for training and recognition input, in a realistic, unconstrained setup in which lighting, pose and user motion pattern have a wide variability and face images are of low resolution. In particular there are three areas of novelty: (i) we show how a photometric model of image formation can be combined with a statistical model of generic face appearance variation, learnt offline, to generalize in the presence of extreme illumination changes; (ii) we use the smoothness of geodesically local appearance manifold structure and a robust same-identity likelihood to achieve invariance to unseen head poses; and (iii) we introduce an accurate video sequence "reillumination" algorithm to achieve robustness to face motion patterns in video. We describe a fully automatic recognition system based on the proposed method and an extensive evaluation on 171 individuals and over 1300 video sequences with extreme illumination, pose and head motion variation. On this challenging data set our system consistently demonstrated a nearly perfect recognition rate (over 99.7%), significantly outperforming state-of-the-art commercial software and methods from the literature. © Springer-Verlag Berlin Heidelberg 2006.

Phototransistors utilizing individual WS2 nanotubes

We report on the photoresponse characteristics of tungsten disulfide (WS2) nanotubes. Field effect transistors (FETs) were fabricated by using individual WS2 multiwall nanotubes. Photo-sensitivity to visible light is clearly observed, with enhancement of the channel conductivity, carrier mobility and carrier concentration upon illumination in the visible regime. Polarization-sensitive measurements reveal a strong anisotropy of the photocurrent on the polarization angle of the incident light with respect to the WS2 nanotube axis. This nano-scale transistor capable of detecting visible light would have a wide range of applications in medical and consumer electronics. © 2008 IEEE. Crown Copyright.

Light-bias induced instability and persistent photoconductivity in In-Zn-O/Ga-In-Zn-O thin film transistors

Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias.

Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

The composition of amorphous oxide semiconductors, which are well known for their optical transparency, can be tailored to enhance their absorption and induce photoconductivity for irradiation with green, and shorter wavelength light. In principle, amorphous oxide semiconductor-based thin-film photoconductors could hence be applied as photosensors. However, their photoconductivity persists for hours after illumination has been removed, which severely degrades the response time and the frame rate of oxide-based sensor arrays. We have solved the problem of persistent photoconductivity (PPC) by developing a gated amorphous oxide semiconductor photo thin-film transistor (photo-TFT) that can provide direct control over the position of the Fermi level in the active layer. Applying a short-duration (10 ns) voltage pulse to these devices induces electron accumulation and accelerates their recombination with ionized oxygen vacancy sites, which are thought to cause PPC. We have integrated these photo-TFTs in a transparent active-matrix photosensor array that can be operated at high frame rates and that has potential applications in contact-free interactive displays. © 2012 Macmillan Publishers Limited. All rights reserved.

Dual gate photo-thin film transistor with high photoconductive gain for high reliability, and low noise flat panel transparent imager

In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

P-16: Light-bias induced instability and persistent photoconductivity in in-zn-o/ga-in-zn-o thin film transistors

Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O thin film transistors with excellent in-dark stability suffer from light-bias induced threshold voltage shift (ΔV T) and defect density changes. Visible light stress leads to ionisation of oxygen vacancy sites, causing persistent photoconductivity. This makes the material act as though it was n-doped, always causing a negative threshold voltage shift under strong illumination, regardless of the magnitude and polarity of the gate bias. © 2011 SID.

Automated Computation of the Fundamental Matrix for Vision-Based Construction Site Applications

Estimating the fundamental matrix (F), to determine the epipolar geometry between a pair of images or video frames, is a basic step for a wide variety of vision-based functions used in construction operations, such as camera-pair calibration, automatic progress monitoring, and 3D reconstruction. Currently, robust methods (e.g., SIFT + normalized eight-point algorithm + RANSAC) are widely used in the construction community for this purpose. Although they can provide acceptable accuracy, the significant amount of required computational time impedes their adoption in real-time applications, especially video data analysis with many frames per second. Aiming to overcome this limitation, this paper presents and evaluates the accuracy of a solution to find F by combining the use of two speedy and consistent methods: SURF for the selection of a robust set of point correspondences and the normalized eight-point algorithm. This solution is tested extensively on construction site image pairs including changes in viewpoint, scale, illumination, rotation, and moving objects. The results demonstrate that this method can be used for real-time applications (5 image pairs per second with the resolution of 640 × 480) involving scenes of the built environment.

Increasing the open-circuit voltage of photoprotein-based photoelectrochemical cells by manipulation of the vacuum potential of the electrolytes.

The innately highly efficient light-powered separation of charge that underpins natural photosynthesis can be exploited for applications in photoelectrochemistry by coupling nanoscale protein photoreaction centers to man-made electrodes. Planar photoelectrochemical cells employing purple bacterial reaction centers have been constructed that produce a direct current under continuous illumination and an alternating current in response to discontinuous illumination. The present work explored the basis of the open-circuit voltage (V(OC)) produced by such cells with reaction center/antenna (RC-LH1) proteins as the photovoltaic component. It was established that an up to ~30-fold increase in V(OC) could be achieved by simple manipulation of the electrolyte connecting the protein to the counter electrode, with an approximately linear relationship being observed between the vacuum potential of the electrolyte and the resulting V(OC). We conclude that the V(OC) of such a cell is dependent on the potential difference between the electrolyte and the photo-oxidized bacteriochlorophylls in the reaction center. The steady-state short-circuit current (J(SC)) obtained under continuous illumination also varied with different electrolytes by a factor of ~6-fold. The findings demonstrate a simple way to boost the voltage output of such protein-based cells into the hundreds of millivolts range typical of dye-sensitized and polymer-blend solar cells, while maintaining or improving the J(SC). Possible strategies for further increasing the V(OC) of such protein-based photoelectrochemical cells through protein engineering are discussed.

Achieving robust face recognition from video by combining a weak photometric model and a learnt generic face invariant

In spite of over two decades of intense research, illumination and pose invariance remain prohibitively challenging aspects of face recognition for most practical applications. The objective of this work is to recognize faces using video sequences both for training and recognition input, in a realistic, unconstrained setup in which lighting, pose and user motion pattern have a wide variability and face images are of low resolution. The central contribution is an illumination invariant, which we show to be suitable for recognition from video of loosely constrained head motion. In particular there are three contributions: (i) we show how a photometric model of image formation can be combined with a statistical model of generic face appearance variation to exploit the proposed invariant and generalize in the presence of extreme illumination changes; (ii) we introduce a video sequence re-illumination algorithm to achieve fine alignment of two video sequences; and (iii) we use the smoothness of geodesically local appearance manifold structure and a robust same-identity likelihood to achieve robustness to unseen head poses. We describe a fully automatic recognition system based on the proposed method and an extensive evaluation on 323 individuals and 1474 video sequences with extreme illumination, pose and head motion variation. Our system consistently achieved a nearly perfect recognition rate (over 99.7% on all four databases). © 2012 Elsevier Ltd All rights reserved.