Design advisor: How to supply designers with knowledge about inclusion

Chapter 15 Design Advisor: How to Supply Designers with Knowledge about Inclusion? E. Zitkus, PM Langdon and PJ Clarkson 15.1 Introduction In an ideal scenario accessibility issues such as legibility, usability and associated cognitive ...

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.