Sufficient conditions for zeno behavior in lagrangian hybrid systems

This paper presents easily verifiable sufficient conditions for the existence of Zenobehavior in Lagrangian hybrid systems, i.e., hybrid systems modeling mechanical systemsundergoing impacts. © 2008 Springer-Verlag Berlin Heidelberg.

On the existence of Zeno behavior in hybrid systems with non-isolated zeno equilibria

This paper presents proof-certificate based sufficient conditions for the existence of Zeno behavior in hybrid systems near non-isolated Zeno equilibria. To establish these conditions, we first prove sufficient conditions for Zeno behavior in a special class of hybrid systems termed first quadrant interval hybrid systems. The proof-certificate sufficient conditions are then obtained through a collection of functions that effectively "reduce" a general hybrid system to a first quadrant interval hybrid system. This paper concludes with an application of these ideas to Lagrangian hybrid systems, resulting in easily verifiable sufficient conditions for Zeno behavior. © 2008 IEEE.

Lyapunov-like conditions for the existence of zeno behavior in hybrid and lagrangian hybrid systems

Lyapunov-like conditions that utilize generalizations of energy and barrier functions certifying Zeno behavior near Zeno equilibria are presented. To better illustrate these conditions, we will study them in the context of Lagrangian hybrid systems. Through the observation that Lagrangian hybrid systems with isolated Zeno equilibria must have a onedimensional configuration space, we utilize our Lyapunov-like conditions to obtain easily verifiable necessary and sufficient conditions for the existence of Zeno behavior in systems of this form. © 2007 IEEE.

Unified analytic model for current-voltage behavior in amorphous oxide semiconductor TFTs

We present a simple and semi-physical analytical description of the current-voltage characteristics of amorphous oxide semiconductor thin-film transistors in the above-threshold and sub-threshold regions. Both regions are described by single unified expression that employs the same set of model parameter values directly extracted from measured terminal characteristics. The model accurately reproduces measured characteristics of amorphous semiconductor thin film transistors in general, yielding a scatter of < 4%. © 1980-2012 IEEE.