HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Improving discharge characteristics of indirect integral collector storage systems with multi-element storage

Desired performance of unpressurized integral collector storage systems hinges on the appropriate selection of storage volume and the immersed heat exchanger. This paper presents analytical results expressing the relation between storage volume, number of heat exchanger transfer units and temperature limited performance. For a system composed of a single storage element, the limiting behavior of a perfectly stratified storage element is shown to be superior to a fully-mixed storage element, consistent with more general analysis of thermal storage. Since, however, only the fully-mixed limit is readily obtainable in a physical system, the present paper also examines a division of the storage volume into separate compartments. This multi-element storage system shows significantly improved discharge characteristics as a result of improved elemental area utilization and temperature variation between elements, comparable in many cases to a single perfectly-stratified storage element. In addition, the multi-element system shows increased robustness with respect to variations in heat exchanger effectiveness and initial storage temperature.

Eliminating discharge imbalances in predicting shallow water flows with shocks

The shallow water equations are widely used in modelling environmental flows. Being a hyperbolic system of differential equations, they admit shocks that represent hydraulic jumps and bores. Although the water surface can be solved satisfactorily with the modern shock-capturing schemes, the predicted flow rate often suffers from imbalances where shocks occur, eg the mass conservation is violated by failing to maintain a constant discharge rate at every cross-section in a steady open channel flow. A total-variation-diminishing Lax-Wendroff scheme is developed, and used to demonstrate how to achieve an exact flux balance. The performance of the proposed methods is inspected through some test cases, which include 1- and 2-dimensional, flat and irregular bed scenarios. The proposed methods are shown to preserve the mass exactly, and can be easily extended to other shock-capturing models.

Ion beam, focused ion beam, and plasma discharge machining

Non-conventional methods of machining are used for many engineering applications where the traditional processes fail to be cost-effective. Such processes include Ion Beam Machining (IBM), focused ion beam (FIB) machining and plasma discharge machining. The mechanisms of material removal and associated hardware and software developed for industrial applications of these fascinating electro-physical and chemical machining processes are reviewed together with the latest research findings. © 2009 CIRP.

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.

Low-temperature time-resolved photoluminescence spectroscopy is used to probe the dynamics of photoexcited carriers in single InP nanowires. At early times after pulsed excitation, the photoluminescence line shape displays a characteristic broadening, consistent with emission from a degenerate, high-density electron-hole plasma. As the electron-hole plasma cools and the carrier density decreases, the emission rapidly converges toward a relatively narrow band consistent with free exciton emission from the InP nanowire. The free excitons in these single InP nanowires exhibit recombination lifetimes closely approaching that measured in a high-quality epilayer, suggesting that in these InP nanowires, electrons and holes are relatively insensitive to surface states. This results in higher quantum efficiencies than other single-nanowire systems as well as significant state-filling and band gap renormalization, which is observed at high electron-hole carrier densities.