The effect of shape on the adhesion of fibrillar surfaces.

Experimental data have demonstrated that mushroom-shaped fibrils adhere much better to smooth substrates than punch-shaped fibrils. We present a model that suggests that detachment processes for such fibrils are controlled by defects in the contact area that are confined to its outer edge. Stress analysis of the adhered fibril, carried out for both punch and mushroom shapes with and without friction, suggests that defects near the edge of the adhesion area are much more damaging to the pull-off strength in the case of the punch than for the mushroom. The simulations show that the punch has a higher driving force for extension of small edge defects compared with the mushroom adhesion. The ratio of the pull-off force for the mushroom to that of the punch can be predicted from these simulations to be much greater than 20 in the friction-free case, similar to the experimental value. In the case of sticking friction, a ratio of 14 can be deduced. Our analysis also offers a possible explanation for the evolution of asymmetric mushroom shapes (spatulae) in the adhesion organ of geckos.

Mechanisms of erosion of unfilled elastomers by solid particle impact

The mechanisms of material removal were studied during the erosion of two unfilled elastomers (natural rubber and epoxidised natural rubber). The effects of impact velocity and of lubrication by silicone oil were investigated. The development of surface features due to single impacts and during the early stages of erosion was followed by scanning electron microscopy. The basic material removal mechanism at impact angles of both 30° and 90° involves the formation and growth of fine fatigue cracks under the tensile surface stresses caused by impact. No damage was observed after single impacts; it was found that many successive impacts are necessary for material removal. It was found that the erosion rate has a very strong dependance on impact velocity above about 50 ms-1.

Experimentally validated three dimensional GCT wafer level simulations

In this paper we present a wafer level three-dimensional simulation model of the Gate Commutated Thyristor (GCT) under inductive switching conditions. The simulations are validated by extensive experimental measurements. To the authors' knowledge such a complex simulation domain has not been used so far. This method allows the in depth study of large area devices such as GCTs, Gate Turn Off Thyristors (GTOs) and Phase Control Thyristors (PCTs). The model captures complex phenomena, such as current filamentation including subsequent failure, which allow us to predict the Maximum Controllable turn-off Current (MCC) and the Safe Operating Area (SOA) previously impossible using 2D distributed models. © 2012 IEEE.

Heat source modelling and natural ventilation efficiency

We compare natural ventilation flows established by a range of heat source distributions at floor level. Both evenly distributed and highly localised line and point source distributions are considered. We demonstrate that modelling the ventilation flow driven by a uniformly distributed heat source is equivalent to the flow driven by a large number of localised sources. A model is developed for the transient flow development in a room with a uniform heat distribution and is compared with existing models for localised buoyancy inputs. For large vent areas the flow driven by localised heat sources reaches a steady state more rapidly than the uniformly distributed case. For small vent areas there is little difference in the transient development times. Our transient model is then extended to consider the time taken to flush a neutrally buoyant pollutant from a naturally ventilated room. Again comparisons are drawn between uniform and localised (point and line) heat source geometries. It is demonstrated that for large vent areas a uniform heat distribution provides the fastest flushing. However, for smaller vent areas, localised heat sources produce the fastest flushing. These results are used to suggest a definition for the term 'natural ventilation efficiency', and a model is developed to estimate this efficiency as a function of the room and heat source geometries. © 2006 Elsevier Ltd. All rights reserved.

The destruction mechanism in GCTs

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE.