High Frequency Acousto-electric Single Photon Source

We propose a single optical photon source for quantum cryptography based on the acousto-electric effect. Surface acoustic waves (SAWs) propagating through a quasi-one-dimensional channel have been shown to produce packets of electrons which reside in the SAW minima and travel at the velocity of sound. In our scheme these electron packets are injected into a p-type region, resulting in photon emission. Since the number of electrons in each packet can be controlled down to a single electron, a stream of single (or N) photon states, with a creation time strongly correlated with the driving acoustic field, should be generated.

Enhanced 10-Gbit/s link performance for directly Modulated complex-coupled DFB lasers via resonance frequency, damping rate, and chirp

This paper demonstrates the respective roles that combined index- and gain-coupling play in the overall link performance of distributed feedback (DFB) lasers. Their impacts on both static and dynamic properties such as slope efficiency, resonance frequency, damping rate, and chirp are investigated. Simulation results are compared with experimental data with good agreement. Transmission-oriented optimization is then demonstrated based on a targeted specification. The design tradeoffs are revealed, and it is shown that a modest combination of index- and gain-coupling enables optimum transmission at 10 Gbit/s.

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release Al-1%Si membranes and has a low thermal budget (<450 °C) being compatible with CMOS post-processing. The proposed silicon sacrificial layer dry etching (SSLDE) process is able to provide very high Si etch rates (3-15 μm/min, depending on process parameters) with high Si: SiO2 selectivity (>10,000:1). Single- and double-air-gap MEMS capacitors, as well as some dedicated test structures needed to calibrate the electro-mechanical parameters and explore the reliability of the proposed technology, have been fabricated with the new process. S-parameter measurements from 100 MHz up to 2 GHz have shown a capacitance tuning range higher than 100% with the double-air-gap architecture. The tuning range can be enlarged with a proper DC electrical bias of the capacitor electrodes. Finally, the reported results make the proposed MEMS tuneable capacitor a good candidate for above-IC integration in communications applications. © 2004 Elsevier B.V. All rights reserved.

Anchor limited q in flexural mode resonators

This paper reports a preliminary examination of the effect of anchor geometry design on the quality factor of flexural mode resonators operating in vacuum using both FE simulation and measurements of resonator frequency response. Three types of structures have been considered in this study: an elliptical mode ring, a double ended tuning fork, and a doubly-clamped beam. We consider the relative distribution of strain energies in both the resonant structure and the connecting stem, which is indicative of the measured quality factor. The measured quality factors of the different structures are compared against each other, based on which suggestions are proposed for optimizing the anchor limited quality factor (Q) in flexural mode micromechanical resonators. ©2008 IEEE.