Turn-off failure mechanism in large area IGCTs

The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer. © 2011 IEEE.

Centrifugal modelling of the landslides triggering mechanism in layered fill slopes

Concerns over loosely compacted fill slopes stability in Hong Kong arouse in the past few decades, since the Sau Mau Ping disasters in 1972 and 1976. Research conducted on loose fill slopes in the past few years aimed to understand the failure mechanisms of a loosely compacted fill slope. Recently, layering effect has been hypothesised to be a possible condition in the fill slopes leading to a fast flowslide triggered by a rise of water table. Centrifuge experiments were conducted to investigate the layering effect on a model granular slope and hence to determine the triggering mechanisms of seepage induced slope failure. Test results showed that slope failure can be easily triggered in layered fill model slopes when seepage is restricted and localised pore water pressure is allowed to build up within the slope. © 2006 Taylor & Francis Group, London.

The destruction mechanism in GCTs

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. © 1963-2012 IEEE.

GMI and mismatched-CSI outage exponents in MIMO block-fading channels

We study transmission over multiple-antenna blockfading channels with imperfect channel state information at both the transmitter and receiver. Specifically, we investigate achievable rates based on the generalized mutual information. We then analyze the corresponding outage probability in the high signal-to-noise ratio regime. © 2013 IEEE.

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation. © 2014 AIP Publishing LLC.