Fabrication and integration of horizontally aligned carbon nanotube C60 films for UV sensors

Carbon nanotubes (CNTs) are promising for microsystems applications, yet few techniques effectively enable integration of CNTs with precise control of placement and alignment of the CNTs at sufficiently high densities necessary for compelling mechanical or electrical performance. This paper explores new methods for scalable integration of dense, horizontally aligned (HA) CNTs with patterned electrodes. Our technique involves the synthesis of vertically aligned (VA) CNTs directly on a conductive underlayer and subsequent mechanical transformation into HA-CNTs, thus making electrical contact between two electrodes. We compare elasto-capillary folding and mechanical rolling as methods for transforming VA-CNTs, which lead to distinctly different HA-CNT morphologies and potentially impact material and device properties. As an example application of this novel CNT morphology, we investigate fabrication of electrically addressable CNT-C60 hybrid thin films that we previously demonstrated as photodetectors. We synthesize these assemblies by crystallizing C60 from dispersion on HA-CNT thin-film scaffoldings. HA-CNTs fabricated by rolling result in relatively low packing density, so C 60 crystals embed inside the HA-CNT matrix during synthesis. On the other hand, C60 crystallization is restricted to near the surface of HA-CNT films made by the elasto-capillary process. © 2013 IEEE.

Synthesis of carbon 'onions' in water.

The fabrication of carbon nanomaterials usually calls for expensive vacuum systems to generate plasmas and yields are disappointingly low. Here we describe a simple method for producing high-quality spherical carbon nano-'onions' in large quantities without the use of vacuum equipment. The nanoparticles, which have C60 cores surrounded by onion-like nested particles, are generated by an arc discharge between two graphite electrodes submerged in water. This technique is economical and environmentally benign, and produces uncontaminated nanoparticles which may be useful in many applications.

Fabrication and properties of TBCCO films via air-atomising spray deposition of thallium-free precursors

The high-field properties of polycrystalline superconducting TlBaCaCuO films fabricated by the incorporation of thallium vapour into air-atomised BaCaCuO precursors are described. Thick films with Tc values in the range 106-111 K have been prepared on polycrystalline yttria-stabilised zirconia substrates. The surface morphology, crystal structure and composition of the films are related to their high-field transport and magnetisation properties. Typical 10 mm × 9 mm films show Jc values > 1×104 A/cm2 at 77 K (0 T). The best film has a Jc=1.3×104 A/cm2 (Ic=3.6 A) at 77 K (0 T). Films prepared on 26 mm×9 mm substrates show typical large-area Jc values > 0.5×104 A/cm2 (77 K, 0 T). A square planar specimen of dimensions 4.3 mm ×4.3 mm exhibited magnetisation Jc values=1.2×105 A/cm2 at 4.2 K (0.1 T), 9.3×104 A/cm2 at 10 K (0.1 T), 3.3×104 A/ cm2 at 4 K (8 T), and 1.6×104 A/cm2 at 10 K (8 T). © 1994.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Transparent electrode with a nanostructured coating.

Using single-walled nanotubes as an example, we fabricated transparent conductive coatings and demonstrated a new technique of centrifuge coating as a potential low-waste, solution-based batch process for the fabrication of nanostructured coatings. A theoretical model is developed to account for the sheet resistance exhibited by layered random-network coatings such as nanofilaments and graphene. The model equation is analytical and compact, and allows the correlation of very different scaling regimes reported in the literature to the underlying coating microstructure. Finally, we also show a refined experimental setup to systematically measure the curvature-dependent sheet resistance.