Reversible nanoscale switching of polytwin orientation in a ferroelectric thin film induced by a local electric field

The response to a local, tip-induced electric field of ferroelastic domains in thin polycrystalline lead zirconate titanate films with predominantly (110) orientation has been studied using Enhanced Piezoresponse Force Microscopy. Two types of reversible polytwin switching between well-defined orientations have been observed. When a-c domains are switched to other forms of a-c domains, the ferroelastic domain walls rotate in-plane by 109.5°, and when a-c domains are switched to c-c domains (or vice-versa), the walls rotate by 54.75°. © 2013 AIP Publishing LLC.

Excellent oxidation endurance of boron nitride nanotube field electron emitters

Boron nitride nanotubes (BNNTs) are considered as a promising cold electron emission material owing to their negative electron affinity. BNNT field emitters show excellent oxidation endurance after high temperature thermal annealing of 600 °C in air ambient. There is no damage to the BNNTs after thermal annealing at a temperature of 600 °C and also no degradation of field emission properties. The thermally annealed BNNTs exhibit a high maximum emission current density of 8.39mA/cm2 and show very robust emission stability. The BNNTs can be a promising emitter material for field emission devices under harsh oxygen environments. © 2014 AIP Publishing LLC.

Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology

This paper describes multiple field-coupled simulations and device characterization of fully CMOS-MEMS-compatible smart gas sensors. The sensor structure is designated for gas/vapour detection at high temperatures (>300 °C) with low power consumption, high sensitivity and competent mechanic robustness employing the silicon-on-insulator (SOI) wafer technology, CMOS process and micromachining techniques. The smart gas sensor features micro-heaters using p-type MOSFETs or polysilicon resistors and differentially transducing circuits for in situ temperature measurement. Physical models and 3D electro-thermo-mechanical simulations of the SOI micro-hotplate induced by Joule, self-heating, mechanic stress and piezoresistive effects are provided. The electro-thermal effect initiates and thus affects electronic and mechanical characteristics of the sensor devices at high temperatures. Experiments on variation and characterization of micro-heater resistance, power consumption, thermal imaging, deformation interferometry and dynamic thermal response of the SOI micro-hotplate have been presented and discussed. The full integration of the smart gas sensor with automatically temperature-reading ICs demonstrates the lowest power consumption of 57 mW at 300 °C and fast thermal response of 10 ms. © 2008 IOP Publishing Ltd.

Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Δ VT), while under light stress, VT consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. © 2010 American Institute of Physics.

Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation.

We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO(2) and at the SiO(2)/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.

Secondary flow near an undulatory surface induced by wall blocking effect

Prandtl's secondary mean motions of the second kind near an undulating surface were explained in terms of turbulent blocking effect and kinematic boundary conditions at the surface, and its order of magnitude was estimated. Isotropic turbulence is distorted by the undulating surface of wavelength λ and amplitude h with a low slope, so that h « λ. The prime mechanism for generating the mean flow is that the far-field Isotropic turbulence is distorted by the non-local blocking effect of the surface to become anisotropic axisymmetric turbulence near the surface with principal axis that is not aligned with the local curvature of the undulation. Then the local analysis can be applied and the mechanism is similar to the mean flow generation mechanism for homogeneous axisymmetric turbulence over a planer surface, i.e. gradients of the Reynolds stress caused by the turbulent blocking effect generate the mean motions. The results from this simple analysis are consistent with previous exact analysis in which the effects of curvature are strictly taken into account. The results also qualitatively agree with flow visualization over an undulating surface in a mixing-box.

Unsteady Effects of Shock Wave Induced Separation

The aim of this series is to publish promptly and in detailed form new material from the field of Numerical Fluid Mechanics and Multidisciplinary Design ...

Effect of superstructure stiffness on liquefaction-induced failure Mechanisms

Soil liquefaction following strong earthquakes causes extensive damage to civil engineering structures. Foundations of buildings, bridges etc can suffer excessive rotation/settlement due to liquefaction. Many of the recent earthquakes bear testimony for such damage. In this article a hypothesis that "Superstructure stiffness can determine the type of liquefaction-induced failure mechanism suffered by the foundations" is proposed. As a rider to this hypothesis, it will be argued that liquefaction will cause failure of a foundation system in a mode of failure that offers least resistance. Evidence will be offered in terms of field observations during the 921 Ji-Ji earthquake in 1999 in Taiwan and Bhuj earthquake of 2001 in India. Dynamic centrifuge test data and finite element analyses results are presented to illustrate the traditional failure mechanisms. Copyright © 2010, IGI Global. Copying or distributing in print or electronic forms without written permission of IGI Global is prohibited.

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency. © 2012 Tan et al.

Occurrence of particle debris field during focused Ga ion beam milling of glassy carbon

To explore the machining characteristics of glassy carbon by focused ion beam (FIB), particles induced by FIB milling on glassy carbon have been studied in the current work. Nano-sized particles in the range of tens of nanometers up to 400 nm can often be found around the area subject to FIB milling. Two ion beam scanning modes - slow single scan and fast repetitive scan - have been tested. Fewer particles are found in single patterns milled in fast repetitive scan mode. For a group of test patterns milled in a sequence, it was found that a greater number of particles were deposited around sites machined early in the sequence. In situ EDX analysis of the particles showed that they were composed of C and Ga. The formation of particles is related to the debris generated at the surrounding areas, the low melting point of gallium used as FIB ion source and the high contact angle of gallium on glassy carbon induces de-wetting of Ga and the subsequent formation of Ga particles. Ultrasonic cleaning can remove over 98% of visible particles. The surface roughness (Ra) of FIB milled areas after cleaning is less than 2 nm. © 2010.

A comparison of two models for the vibration response of piled foundations to inertial and underground-railway-induced loadings

The vibration response of piled foundations due to ground-borne vibration produced by an underground railway is a largely-neglected area in the field of structural dynamics. However, this continues to be an important aspect of research as it is expected that the presence of piled foundations can have a significant influence on the propagation and transmission of the wavefield produced by the underground railway. This paper presents a comparison of two methods that can be employed in calculating the vibration response of a piled foundation: an efficient semi-analytical model, and a Boundary Element model. The semi-analytical model uses a column or an Euler beam to model the pile, and the soil is modelled as a linear, elastic continuum that has the geometry of a thick-walled cylinder with an infinite outer radius and an inner radius equal to the radius of the pile. The boundary element model uses a constant-element BEM formulation for the halfspace, and a rectangular discretisation of the circular pile-soil interface. The piles are modelled as Timoshenko beams. Pile-soil-pile interactions are inherently accounted for in the BEM equations, whereas in the semi-analytical model these are quantified using the superposition of interaction factors. Both models use the method of joining subsystems to incorporate the incident wavefield generated by the underground railway into the pile model. Results are computed for a single pile subject to an inertial loading, pile-soil-pile interactions, and a pile group subjected to excitation from an underground railway. The two models are compared in terms of accuracy, computation time, versatility and applicability, and guidelines for future vibration prediction models involving piled foundations are proposed.

Excess pore pressures around underground structures following earthquake induced liquefaction

Underground structures located in liquefiable soil deposits are susceptible to floatation following an earthquake event due to their lower unit weight relative to the surrounding saturated soil. This inherent buoyancy may cause lightweight structures to float when the soil liquefies. Centrifuge tests have been carried out to study the excess pore pressure generation and dissipation in liquefiable soils. In these tests, near full liquefaction conditions were attained within a few cycles of the earthquake loading. In the case of high hydraulic conductivity sands, significant dissipation could take place even during the earthquake loading which inhibits full liquefaction from occurring. In the case of excess pore pressure generation and dissipation around a floating structure, the cyclic response of the structure may lead to the reduction in excess pore pressure near the face of the structure as compared to the far field. This reduction in excess pore pressure is due to shear-induced dilation and suction pressures arising from extensile stresses at the soil-structure interface. Given the lower excess pore pressure around the structure; the soil around the structure retains a portion of this shear strength which in turn can discourage significant uplift of the underground structure. Copyright © 2012, IGI Global.

Numerical modelling of chirality-Induced bi-Directional swimming of artificial flagella

Biomimetic micro-swimmers can be used for various medical applications, such as targeted drug delivery and micro-object (e.g. biological cells) manipulation, in lab-on-a-chip devices. Bacteria swim using a bundle of flagella (flexible hair-like structures) that form a rotating cork-screw of chiral shape. To mimic bacterial swimming, we employ a computational approach to design a bacterial (chirality-induced) swimmer whose chiral shape and rotational velocity can be controlled by an external magnetic field. In our model, we numerically solve the coupled governing equations that describe the system dynamics (i.e. solid mechanics, fluid dynamics and magnetostatics). We explore the swimming response as a function of the characteristic dimensionless parameters and put special emphasis on controlling the swimming direction. Our results provide fundamental physical insight on the chirality-induced propulsion, and it provides guidelines for the design of magnetic bi-directional micro-swimmers. © 2013 The Author(s) Published by the Royal Society. All rights reserved.