Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

Colliding-pulse modelocked quantum dot lasers

Colliding pulse modelocking is demonstrated for the first time in quantum dot lasers. Using 3.9 mm-long devices with a 245 pm-long central absorber, 7 ps pulses at a repetition rate of 20 GHz is obtained. For Gaussian pulses a time-bandwidth product close to the Fourier transform limit is determined. These results confirm the potential of quantum dot lasers for high repetition rate harmonic modelocking.

Gain bandwidth characterization of surface-emitting quantum well laser gain structures for femtosecond operation

We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for broad-band InGaAs/GaAs quantum well gain surface-emitting semiconductor laser structures capable of producing pulses down to 60 fs width when mode-locked with an optical Stark saturable absorber mirror. © 2010 Optical Society of America.

Models for acoustic propagation through turbofan exhaust flows-lined ducts

Turbomachinery noise radiating into the rearward arc is an important problem. This noise is scattered by the trailing edges of the nacelle and the jet exhaust, and interacts with the shear layers between the external flow, bypass stream and jet, en route to the far field. In the past a range of relevant model problems involving semi-infinite cylinders have been solved. However, one limitation of these previous solutions is that they do not allow for the jet nozzle protruding a finite distance beyond the end of the nacelle (or in certain configurations being buried a finite distance upstream). With this in mind, we have used the matrix Wiener-Hopf technique to allow precisely this finite nacelle-jet nozzle separation to be included. We have previously reported results for the case of hard-walled ducts, which requires factorisation of a 2 × 2 matrix. In this paper we extend this work by allowing one of the duct walls, in this case the outer wall of the jet pipe, to be acoustically lined. This results in the need to factorise a 3 × 3 matrix, which is completed by use of a combination of pole-removal and Pad́e approximant techniques. Sample results are presented, investigating in particular the effects of exit plane stagger and liner impedance. Here we take the mean flow to be zero, but extension to nonzero Mach numbers in the core and bypass flow has also been completed. Copyright © 2009 by Nigel Peake & Ben Veitch.

Characterisation of ultrafast micro-structuring of alumina (Al 2O3)

Alumina ceramic, Al2O3, presents a challenge to laser micro-structuring due to its neglible linear absorption coefficient in the optical region coupled with its physical properties such as extremely high melting point and high thermal conductivity. In this work, we demonstrate clean micro-structuring of alumina using NIR (λ=775 nm) ultrafast optical pulses with 180 fs duration at 1kHz repetition rate. Sub-picosecond pulses can minimise thermal effects along with collateral damage when processing conditions are optimised, consequently, observed edge quality is excellent in this regime. We present results of changing micro-structure and morphology during ultrafast processing along with measured ablation rates and characteristics of developing surface relief. Initial crystalline phase (alpha Al2O3) is unaltered by femtosecond processing. Multi-pulse ablation threshold fluence Fth, ∼ 1.1 Jcm-2 and at low fluence ∼ 3 Jcm -2, independent of machined depth, there appears to remain a ∼ 2 μm thick rapidly re-melted layer. On the other hand, micro-structuring at high fluence F ∼ 21 Jcm-2 shows no evidence of melting and the machined surface is covered with a fine layer of debris, loosely attached. The nature of debris produced by femtosecond ablation has been investigated and consists mainly of alumina nanoparticles with diameters from 20 nm to 1 micron with average diameter ∼ 300 nm. Electron diffraction shows these particles to be essentially single crystal in nature. By developing a holographic technique, we have demonstrated periodic micrometer level structuring on polished samples of this extremely hard material.